Allicdata Part #: | 1727-4232-2-ND |
Manufacturer Part#: |
BAS16L,315 |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | DIODE GEN PURP 100V 215MA SOD882 |
More Detail: | Diode Standard 100V 215mA (DC) Surface Mount DFN10... |
DataSheet: | BAS16L,315 Datasheet/PDF |
Quantity: | 120000 |
10000 +: | $ 0.03859 |
30000 +: | $ 0.03617 |
50000 +: | $ 0.03207 |
100000 +: | $ 0.03135 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 215mA (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 150mA |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 4ns |
Current - Reverse Leakage @ Vr: | 500nA @ 80V |
Capacitance @ Vr, F: | 1.5pF @ 0V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | SOD-882 |
Supplier Device Package: | DFN1006-2 |
Operating Temperature - Junction: | 150°C (Max) |
Base Part Number: | BAS16L |
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BAS16L, 315 Application Field and Working Principle
BAS16L,315 Diode is a type of Rectifier-Single diode. It is a high-performance, surface mount, low VF (Voltage Floor) series diode. It is low-power, high-efficiency and offers low-power consumption characteristics.
Features of BAS16L, 315
- Low Vf
- Low noise
- Low current consumption
- High-speed switching
- Low power dissipation
Applications of BAS16L, 315
BAS16L,315 is mainly used in the following applications:
- Computer power management
- Portable media players
- Capacitive touch screen displays
- Wireless charging systems
- Cell phone power management
Working Principle of BAS16L, 315
BAS16L,315 uses a single rectifier element, which is a silicon-oxide-nitride-oxide-semiconductor (SONOS) diode. The diode has a low forward voltage drop, which reduces power dissipation. This is an important factor in portable electronics that have limited battery capacity and long-term reliability.
In BAS16L,315, the junction formed between the n-type and p-type materials of the SONOS structure blocks current in one direction, allowing only current to flow in the other direction. This prevents any back-flow of electricity and allows the device to act as a rectifier with superior performance characteristics.
When used as a rectifier, the BAS16L,315 provides a very low forward voltage drop, in addition to the low reverse recovery time that is offered by this type of diode. This combination of features makes the BAS16L,315 an ideal candidate for use in a wide range of applications, including power management, portable electronics, and wireless charging systems.
Conclusion
The BAS16L,315 is an important type of rectifier-single diode that provides superior efficiency and power consumption characteristics. Its low forward voltage drop and fast recovery time makes it an ideal choice for applications such as computer power management, portable media players, energy-saving devices, and wireless charging systems.
The specific data is subject to PDF, and the above content is for reference
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BAS16GWX | Nexperia USA... | -- | 1000 | DIODE GEN PURP 100V 215MA... |
BAS16LT3G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 75V 200MA ... |
BAS16WT1G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 100V 200MA... |
BAS16HT3G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 100V 200MA... |
BAS19,235 | Nexperia USA... | 0.01 $ | 1000 | DIODE GEN PURP 100V 200MA... |
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BAS116LT3G | ON Semicondu... | 0.02 $ | 10000 | DIODE GEN PURP 75V 200MA ... |
BAS16-HE3-08 | Vishay Semic... | -- | 15000 | DIODE GEN PURP 75V 150MA ... |
BAS16WS-HE3-08 | Vishay Semic... | 0.03 $ | 9000 | DIODE GEN PURP 75V 250MA ... |
BAS16GWJ | Nexperia USA... | -- | 60000 | DIODE GEN PURP 100V 215MA... |
BAS19LT1G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 120V 200MA... |
BAS16-7-F | Diodes Incor... | -- | 1000 | DIODE GEN PURP 75V 200MA ... |
BAS16HT1G | ON Semicondu... | -- | 40 | DIODE GEN PURP 100V 200MA... |
BAS16XV2T5G | ON Semicondu... | -- | 16000 | DIODE GEN PURP 75V 200MA ... |
BAS16X-TP | Micro Commer... | 0.02 $ | 56000 | DIODE GEN PURP 75V 200MA ... |
BAS16W,115 | Nexperia USA... | 0.02 $ | 48000 | DIODE GEN PURP 100V 175MA... |
BAS16P2T5G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 100V 200MA... |
BAS16W-TP | Micro Commer... | -- | 204000 | DIODE GEN PURP 75V 100MA ... |
BAS1603WE6327HTSA1 | Infineon Tec... | 0.03 $ | 9000 | DIODE GEN PURP 80V 250MA ... |
BAS1602VH6327XTSA1 | Infineon Tec... | 0.03 $ | 18000 | DIODE GEN PURP 80V 200MA ... |
BAS16WS-E3-08 | Vishay Semic... | 0.03 $ | 1000 | DIODE GEN PURP 75V 250MA ... |
BAS19 | ON Semicondu... | -- | 18000 | DIODE GEN PURP 120V 200MA... |
BAS116LT1G | ON Semicondu... | -- | 3000 | DIODE GEN PURP 75V 200MA ... |
BAS116LP3-7 | Diodes Incor... | -- | 70000 | DIODE GEN PURP 85V 215MA ... |
BAS19W-7-F | Diodes Incor... | -- | 3000 | DIODE GEN PURP 100V 200MA... |
BAS16H,115 | Nexperia USA... | 0.04 $ | 18000 | DIODE GEN PURP 100V 215MA... |
BAS16L,315 | Nexperia USA... | 0.04 $ | 120000 | DIODE GEN PURP 100V 215MA... |
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