Allicdata Part #: | BAS16-FDITR-ND |
Manufacturer Part#: |
BAS16-7-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE GEN PURP 75V 200MA SOT23-3 |
More Detail: | Diode Standard 75V 200mA Surface Mount SOT-23-3 |
DataSheet: | BAS16-7-F Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 75V |
Current - Average Rectified (Io): | 200mA |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 150mA |
Speed: | Small Signal = |
Reverse Recovery Time (trr): | 4ns |
Current - Reverse Leakage @ Vr: | 1µA @ 75V |
Capacitance @ Vr, F: | 2pF @ 0V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Operating Temperature - Junction: | -65°C ~ 150°C |
Base Part Number: | BAS16 |
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Introduction
BAS16-7-F is a single high-efficiency diode designed to rectify a wide range of AC, DC and digital signals. It is composed of an antimony-activated diffusion junction and a pair of lightly-doped Zener regions. It can be used to power a wide range of electronic systems from a single source, ranging from automotive and computer applications, to communications and industrial systems. This article will discuss the application field and working principle of the BAS16-7-F.
Application Field
The BAS16-7-F diode is designed for use in a wide range of applications. It is ideal for use in automotive applications, where it can be used to power a variety of systems on the vehicle, such as the navigation systems, HVAC systems, and infotainment systems. It can also be used in computer systems, where it can be used to drive a wide range of peripherals, such as graphics cards, serial and parallel ports, and internal storage devices. Additionally, it is suitable for use in communication systems, where it is used to provide power to radios, modems, and other telecommunication hardware. In industrial systems, the diode can be used to power automation and control systems, as well as other equipment.
Working Principle
The BAS16-7-F diode is composed of an antimony-activated diffusion junction, as well as a pair of lightly-doped Zener regions. The diffusion junction acts as a semiconductor switch, which is capable of switching between forward and reverse operation. When a positive voltage is applied to the anode, the resistance of the junction decreases, resulting in a current flow from the anode to the cathode. When a negative voltage is applied, the resistance of the junction increases, resulting in a reduced current flow, or none at all. The Zener regions allow for reverse-voltage protection, protecting the diode from damage in cases where the voltage exceeds the breakdown voltage of the diode.
The BAS16-7-F diode is designed to be highly efficient, with a reverse leakage current of 200uA, and a forward current rating of 1 Amp. It has a low forward voltage drop (VF) of 0.9V, and can handle peak currents up to 2 Amps. It is also designed to be highly temperature-stable, with its VF remaining stable over a range of -55 to +150 degrees Celsius. The diode is also RoHS compliant, making it suitable for use in a wide range of applications.
Conclusion
In summary, the BAS16-7-F diode is a single high-efficiency diode designed for use in a wide range of applications. It is composed of an antimony-activated diffusion junction, as well as a pair of lightly-doped Zener regions. The diode is designed to be highly efficient, with a low forward voltage drop and a reverse leakage current of 200uA. It is suitable for use in automotive, computer, communications, and industrial systems. It is also RoHS compliant, making it suitable for use in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BAS16D-HE3-08 | Vishay Semic... | 0.04 $ | 6000 | DIODE GEN PURP 75V 250MA ... |
BAS17,215 | Nexperia USA... | 0.06 $ | 1000 | DIODE GEN PURP 5V 200MA S... |
BAS16TR | SMC Diode So... | 0.03 $ | 222000 | DIODE GEN PURP 75V 200MA ... |
BAS16TT1G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 100V 200MA... |
BAS116TT1G | ON Semicondu... | 0.04 $ | 6000 | DIODE GEN PURP 75V 200MA ... |
BAS19-TP | Micro Commer... | 0.02 $ | 1000 | DIODE GEN PURP 100V 200MA... |
BAS16VY,165 | Nexperia USA... | 0.04 $ | 1000 | DIODE ARRAY GP 100V 200MA... |
BAS16VY,115 | Nexperia USA... | 0.05 $ | 1000 | DIODE ARRAY GP 100V 200MA... |
BAS16VY,125 | Nexperia USA... | 0.05 $ | 1000 | DIODE ARRAY GP 100V 200MA... |
BAS16HMFHT116 | ROHM Semicon... | 0.03 $ | 18000 | HIGH RELIABILITY AND SMAL... |
BAS16VY/APGX | Nexperia USA... | 0.05 $ | 1000 | BAS16VY/APG/SOT363/SC-88D... |
BAS16GWX | Nexperia USA... | -- | 1000 | DIODE GEN PURP 100V 215MA... |
BAS16LT3G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 75V 200MA ... |
BAS16WT1G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 100V 200MA... |
BAS16HT3G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 100V 200MA... |
BAS19,235 | Nexperia USA... | 0.01 $ | 1000 | DIODE GEN PURP 100V 200MA... |
BAS19,215 | Nexperia USA... | 0.01 $ | 1000 | DIODE GEN PURP 100V 200MA... |
BAS16T-7-F | Diodes Incor... | -- | 207 | DIODE GP 85V 75MA SOT523D... |
BAS116LT3G | ON Semicondu... | 0.02 $ | 10000 | DIODE GEN PURP 75V 200MA ... |
BAS16-HE3-08 | Vishay Semic... | -- | 15000 | DIODE GEN PURP 75V 150MA ... |
BAS16WS-HE3-08 | Vishay Semic... | 0.03 $ | 9000 | DIODE GEN PURP 75V 250MA ... |
BAS16GWJ | Nexperia USA... | -- | 60000 | DIODE GEN PURP 100V 215MA... |
BAS19LT1G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 120V 200MA... |
BAS16-7-F | Diodes Incor... | -- | 1000 | DIODE GEN PURP 75V 200MA ... |
BAS16HT1G | ON Semicondu... | -- | 40 | DIODE GEN PURP 100V 200MA... |
BAS16XV2T5G | ON Semicondu... | -- | 16000 | DIODE GEN PURP 75V 200MA ... |
BAS16X-TP | Micro Commer... | 0.02 $ | 56000 | DIODE GEN PURP 75V 200MA ... |
BAS16W,115 | Nexperia USA... | 0.02 $ | 48000 | DIODE GEN PURP 100V 175MA... |
BAS16P2T5G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 100V 200MA... |
BAS16W-TP | Micro Commer... | -- | 204000 | DIODE GEN PURP 75V 100MA ... |
BAS1603WE6327HTSA1 | Infineon Tec... | 0.03 $ | 9000 | DIODE GEN PURP 80V 250MA ... |
BAS1602VH6327XTSA1 | Infineon Tec... | 0.03 $ | 18000 | DIODE GEN PURP 80V 200MA ... |
BAS16WS-E3-08 | Vishay Semic... | 0.03 $ | 1000 | DIODE GEN PURP 75V 250MA ... |
BAS19 | ON Semicondu... | -- | 18000 | DIODE GEN PURP 120V 200MA... |
BAS116LT1G | ON Semicondu... | -- | 3000 | DIODE GEN PURP 75V 200MA ... |
BAS116LP3-7 | Diodes Incor... | -- | 70000 | DIODE GEN PURP 85V 215MA ... |
BAS19W-7-F | Diodes Incor... | -- | 3000 | DIODE GEN PURP 100V 200MA... |
BAS16H,115 | Nexperia USA... | 0.04 $ | 18000 | DIODE GEN PURP 100V 215MA... |
BAS16L,315 | Nexperia USA... | 0.04 $ | 120000 | DIODE GEN PURP 100V 215MA... |
BAS16SL | ON Semicondu... | -- | 16000 | DIODE GEN PURP 85V 150MA ... |
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