BAS16GWJ

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A BAS16GWJ is a small signal surface mounted Schottky Barrier Diode. As a member of the “Small Outline Semiconductor (SOS)” family of Diodes, it is a cost effective, miniaturized variant of the widely popular glass-passivated power diodes, such as the BAS21. BAS16GWJ is specifically designed for operation in low-power single-ended or bridge configuration and is suitable for rectifying medium power supplies or as part of voltage regulation and control circuits. Due to its impressive technical specs, the BAS16GWJ is widely used in a variety of applications, including automotive applications, voltage regulation, and portable electronic devices.BAS16GWJ consists of two PN junctions, each with its own anode and cathode, which are connected together to form a single conductive path. At normal operating conditions, the majority carriers in the PN junction is electrons, which facilitate the current flow in the “forward” direction. Under reverse-biased conditions, majority carriers are holes, which block current flow and reduce the forward-biased current drastically. This dynamic action can be used to protect electronic and communication devices from damage caused by excessive voltage and current surges.The main characteristics of the BAS16GWJ are its low forward voltage drop and fast switching speed. The device offers a typical forward voltage drop of around 0.425V and a maximum surge current of around 45A. This combination makes the BAS16GWJ ideal for use in automotive and low-power, single-ended or bridge rectifier circuits. Furthermore, the BAS16GWJ draws a very low reverse-leakage current, which means it can also be used in some applications that require lower operating costs.In terms of its working principle, the BAS16GWJ makes use of Schottky Barrier Diode (SBD) technology, in which a metal-semiconductor junction is created between a metal and the semiconductor material. Due to the small area of the semiconductor-metal junction, the carrier concentrations are lower in this region, which allows electrons to easily tunnel through the junction barrier without being affected by the built-in electric field. This phenomenon is called the Schottky effect, which allows fast switching of current in the forward direction. On the other hand, when a reverse voltage is applied to the diode, the current flow is blocked as the semiconductor-metal junction is no longer effective.In summary, the BAS16GWJ is a low-power, Schottky Barrier Diode, specifically designed for use in single-ended and bridge rectifier circuits. Its main advantages include fast switching speed and low forward voltage drop, as well as a low reverse-leakage current. These features make the device ideally suited for various electronics applications, such as automotive, voltage regulation, and portable electronic devices.

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