BAS116T,115 Allicdata Electronics
Allicdata Part #:

568-11082-2-ND

Manufacturer Part#:

BAS116T,115

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: DIODE GEN PURP 75V 215MA SC75
More Detail: Diode Standard 75V 215mA (DC) Surface Mount SC-75
DataSheet: BAS116T,115 datasheetBAS116T,115 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 215mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 5nA @ 75V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75
Operating Temperature - Junction: 150°C (Max)
Base Part Number: BAS116
Description

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Diodes - Rectifiers - Single

The BAS116T, 115 is a fast, low voltage, single power Schottky rectifier diode. They are typically used due to their ultra-low forward drop, low leakage current and virtually no reverse recovery time. The BAS116T, 115 is a low current, low voltage device that is suitable for a wide variety of power applications.

Application Field and Working Principle of BAS116T,115

The BAS116T, 115 is a highly efficient rectifier diode used for a variety of rectification applications. It can be used in power supplies, signal line rectification, and high frequency switching applications. The BAS116T, 115 has a relatively low forward voltage drop of only 0.2 volts and very low reverse leakage current of 100 mA at 20 volts.

The working principle behind the BAS116T, 115 is Schottky rectification. This type of rectification is based on a diode that has a Schottky barrier instead of the usual P-N junction. In Schottky rectification, the diode conducts current only in the forward direction allowing current to flow into the anode while keeping the reverse voltage very low. This reduces dissipation, increases operating efficiency and also reduces switching losses due to the very low junction capacitance.

The BAS116T, 115 is also a very rugged and reliable device due to its low-leakage current, low capacitance, and low forward voltage drop. This makes it an ideal device for a range of power applications requiring high peak current and differential voltage rated devices. In addition, its low power dissipation makes it an ideal choice for high bandwidth switching applications.

The BAS116T, 115 is also designed for a range of low voltage power supplies and DC–DC converters. With a maximum forward voltage drop of only 0.2 volts, it is more efficient than comparable P-N junction rectifiers. This along with its low-leakage current and low capacitance makes it an ideal rectifier choice for a range of low voltage power converter applications.

In conclusion, the BAS116T, 115 is a single power Schottky rectifier diode that is highly efficient and robust. It offers a low forward voltage drop of only 0.2 volts and low reverse leakage current of only 100 mA at 20 volts. This makes it suitable for a range of power applications requiring high current and voltage rated devices as well as high density, high bandwidth switched mode power supplies.

The specific data is subject to PDF, and the above content is for reference

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