Allicdata Part #: | 568-11082-2-ND |
Manufacturer Part#: |
BAS116T,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | DIODE GEN PURP 75V 215MA SC75 |
More Detail: | Diode Standard 75V 215mA (DC) Surface Mount SC-75 |
DataSheet: | BAS116T,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 75V |
Current - Average Rectified (Io): | 215mA (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 150mA |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 3µs |
Current - Reverse Leakage @ Vr: | 5nA @ 75V |
Capacitance @ Vr, F: | 2pF @ 0V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | SC-75 |
Operating Temperature - Junction: | 150°C (Max) |
Base Part Number: | BAS116 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
.Diodes - Rectifiers - Single
The BAS116T, 115 is a fast, low voltage, single power Schottky rectifier diode. They are typically used due to their ultra-low forward drop, low leakage current and virtually no reverse recovery time. The BAS116T, 115 is a low current, low voltage device that is suitable for a wide variety of power applications.
Application Field and Working Principle of BAS116T,115
The BAS116T, 115 is a highly efficient rectifier diode used for a variety of rectification applications. It can be used in power supplies, signal line rectification, and high frequency switching applications. The BAS116T, 115 has a relatively low forward voltage drop of only 0.2 volts and very low reverse leakage current of 100 mA at 20 volts.
The working principle behind the BAS116T, 115 is Schottky rectification. This type of rectification is based on a diode that has a Schottky barrier instead of the usual P-N junction. In Schottky rectification, the diode conducts current only in the forward direction allowing current to flow into the anode while keeping the reverse voltage very low. This reduces dissipation, increases operating efficiency and also reduces switching losses due to the very low junction capacitance.
The BAS116T, 115 is also a very rugged and reliable device due to its low-leakage current, low capacitance, and low forward voltage drop. This makes it an ideal device for a range of power applications requiring high peak current and differential voltage rated devices. In addition, its low power dissipation makes it an ideal choice for high bandwidth switching applications.
The BAS116T, 115 is also designed for a range of low voltage power supplies and DC–DC converters. With a maximum forward voltage drop of only 0.2 volts, it is more efficient than comparable P-N junction rectifiers. This along with its low-leakage current and low capacitance makes it an ideal rectifier choice for a range of low voltage power converter applications.
In conclusion, the BAS116T, 115 is a single power Schottky rectifier diode that is highly efficient and robust. It offers a low forward voltage drop of only 0.2 volts and low reverse leakage current of only 100 mA at 20 volts. This makes it suitable for a range of power applications requiring high current and voltage rated devices as well as high density, high bandwidth switched mode power supplies.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BAS16D-HE3-08 | Vishay Semic... | 0.04 $ | 6000 | DIODE GEN PURP 75V 250MA ... |
BAS17,215 | Nexperia USA... | 0.06 $ | 1000 | DIODE GEN PURP 5V 200MA S... |
BAS16TR | SMC Diode So... | 0.03 $ | 222000 | DIODE GEN PURP 75V 200MA ... |
BAS16TT1G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 100V 200MA... |
BAS116TT1G | ON Semicondu... | 0.04 $ | 6000 | DIODE GEN PURP 75V 200MA ... |
BAS19-TP | Micro Commer... | 0.02 $ | 1000 | DIODE GEN PURP 100V 200MA... |
BAS16VY,165 | Nexperia USA... | 0.04 $ | 1000 | DIODE ARRAY GP 100V 200MA... |
BAS16VY,115 | Nexperia USA... | 0.05 $ | 1000 | DIODE ARRAY GP 100V 200MA... |
BAS16VY,125 | Nexperia USA... | 0.05 $ | 1000 | DIODE ARRAY GP 100V 200MA... |
BAS16HMFHT116 | ROHM Semicon... | 0.03 $ | 18000 | HIGH RELIABILITY AND SMAL... |
BAS16VY/APGX | Nexperia USA... | 0.05 $ | 1000 | BAS16VY/APG/SOT363/SC-88D... |
BAS16GWX | Nexperia USA... | -- | 1000 | DIODE GEN PURP 100V 215MA... |
BAS16LT3G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 75V 200MA ... |
BAS16WT1G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 100V 200MA... |
BAS16HT3G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 100V 200MA... |
BAS19,235 | Nexperia USA... | 0.01 $ | 1000 | DIODE GEN PURP 100V 200MA... |
BAS19,215 | Nexperia USA... | 0.01 $ | 1000 | DIODE GEN PURP 100V 200MA... |
BAS16T-7-F | Diodes Incor... | -- | 207 | DIODE GP 85V 75MA SOT523D... |
BAS116LT3G | ON Semicondu... | 0.02 $ | 10000 | DIODE GEN PURP 75V 200MA ... |
BAS16-HE3-08 | Vishay Semic... | -- | 15000 | DIODE GEN PURP 75V 150MA ... |
BAS16WS-HE3-08 | Vishay Semic... | 0.03 $ | 9000 | DIODE GEN PURP 75V 250MA ... |
BAS16GWJ | Nexperia USA... | -- | 60000 | DIODE GEN PURP 100V 215MA... |
BAS19LT1G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 120V 200MA... |
BAS16-7-F | Diodes Incor... | -- | 1000 | DIODE GEN PURP 75V 200MA ... |
BAS16HT1G | ON Semicondu... | -- | 40 | DIODE GEN PURP 100V 200MA... |
BAS16XV2T5G | ON Semicondu... | -- | 16000 | DIODE GEN PURP 75V 200MA ... |
BAS16X-TP | Micro Commer... | 0.02 $ | 56000 | DIODE GEN PURP 75V 200MA ... |
BAS16W,115 | Nexperia USA... | 0.02 $ | 48000 | DIODE GEN PURP 100V 175MA... |
BAS16P2T5G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 100V 200MA... |
BAS16W-TP | Micro Commer... | -- | 204000 | DIODE GEN PURP 75V 100MA ... |
BAS1603WE6327HTSA1 | Infineon Tec... | 0.03 $ | 9000 | DIODE GEN PURP 80V 250MA ... |
BAS1602VH6327XTSA1 | Infineon Tec... | 0.03 $ | 18000 | DIODE GEN PURP 80V 200MA ... |
BAS16WS-E3-08 | Vishay Semic... | 0.03 $ | 1000 | DIODE GEN PURP 75V 250MA ... |
BAS19 | ON Semicondu... | -- | 18000 | DIODE GEN PURP 120V 200MA... |
BAS116LT1G | ON Semicondu... | -- | 3000 | DIODE GEN PURP 75V 200MA ... |
BAS116LP3-7 | Diodes Incor... | -- | 70000 | DIODE GEN PURP 85V 215MA ... |
BAS19W-7-F | Diodes Incor... | -- | 3000 | DIODE GEN PURP 100V 200MA... |
BAS16H,115 | Nexperia USA... | 0.04 $ | 18000 | DIODE GEN PURP 100V 215MA... |
BAS16L,315 | Nexperia USA... | 0.04 $ | 120000 | DIODE GEN PURP 100V 215MA... |
BAS16SL | ON Semicondu... | -- | 16000 | DIODE GEN PURP 85V 150MA ... |
Diodes - General Purpose, Power, Switchi...
DIODE SCHOTTKY 40V 500MA SC76Diode Schot...
DIODE GEN PURPOSE DO-204ALDiode
DIODE GEN PURP 400V 1A DO41Diode Standar...
DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...
DIODE GEN PURP 400V 500MA D5ADiode Stand...