
BAS21LT1G Discrete Semiconductor Products |
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Allicdata Part #: | BAS21LT1GOSTR-ND |
Manufacturer Part#: |
BAS21LT1G |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE GEN PURP 250V 200MA SOT23 |
More Detail: | Diode Standard 250V 200mA (DC) Surface Mount SOT-2... |
DataSheet: | ![]() |
Quantity: | 60000 |
1 +: | $ 0.01842 |
10 +: | $ 0.01596 |
100 +: | $ 0.01289 |
1000 +: | $ 0.01228 |
10000 +: | $ 0.01166 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 250V |
Current - Average Rectified (Io): | 200mA (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 200mA |
Speed: | Small Signal = |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 100nA @ 200V |
Capacitance @ Vr, F: | 5pF @ 0V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | BAS21L |
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Diodes are a special type of electronic components. Their main function is a rectification of AC voltage. Single diodes are used to construct rectifying bridges, which can now be found in almost every power supply or AC/AC converter. There are many different types of diodes, including the BAS21LT1G.
The BAS21LT1G is a single diode, designed for use in a variety of applications. It is a 200V, 1A surface mount Schottky diode, designed for use with low voltage DC circuits. The device is packaged in a three-leg, surface mount package. It has a forward voltage drop of 0.2V and a replication forward current of 80mA. The operating temperature range for this diode is -65C to +150C.
The BAS21LT1G has a number of applications. It is commonly used in automotive, consumer electronics, and industrial applications which require the rectification of AC voltage. The low voltage drop and low forward current make it particularly suitable for low voltage DC circuits. It is also commonly used in battery-operated circuits and consumer electronics, where its low forward voltage drop helps to improve battery life. For this reason, it is frequently used in consumer electronics such as portable music players, cell phones, and laptop computers.
The BAS21LT1G also has a number of protection and safety features. It is designed to protect circuits from reverse voltage, over voltage, and over current. It is also designed to protect against electrostatic discharge, and is ESD hardy.
The BAS21LT1G\'s working principle is based on the principle of PN junction. When a PN junction is formed, a barrier is formed between the two regions. This barrier allows current in one direction, but blocks current in the other direction. When AC voltage is applied to the PN junction, the voltage across it alternates in polarity. When the polarity is such that the anode is at a more positive potential than the cathode, current is allowed to flow through the diode in forward direction. When the polarity is reversed, no current is allowed to flow through the diode, and it acts as an insulator. This is the basis of a rectifying bridge.
In conclusion, the BAS21LT1G is a single Schottky diode, designed for use with low voltage DC circuits. It is most commonly used in automotive, consumer electronics, and industrial applications. The BAS21LT1G has a low forward voltage drop and its protective features make it particularly suitable for battery-operated circuits and consumer electronics. Its working principle is based on the principle of PN junction.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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BAS21E6359HTMA1 | Infineon Tec... | 0.0 $ | 1000 | DIODE GP 200V 250MA SOT23... |
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BAS28-7 | Diodes Incor... | 0.05 $ | 1000 | DIODE ARRAY GP 85V 215MA ... |
BAS21SLT1G | ON Semicondu... | -- | 50000 | DIODE ARRAY GP 250V 225MA... |
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BAS21LDYL | Nexperia USA... | 0.02 $ | 1000 | BAS21LD/SOD882/SOD2Diode ... |
BAS21J/ZLX | Nexperia USA... | 0.0 $ | 1000 | DIODE GEN PURP 300V 250MA... |
BAS21M3T5G | ON Semicondu... | -- | 8000 | DIODE GEN PURP 250V 200MA... |
BAS20HT1 | ON Semicondu... | -- | 1000 | DIODE GEN PURP 200V 200MA... |
BAS2103WE6327HTSA1 | Infineon Tec... | -- | 141000 | DIODE GEN PURP 200V 250MA... |
BAS21WT-TP | Micro Commer... | 0.03 $ | 1000 | DIODE GEN PURP 200V 200MA... |
BAS21UE6433HTMA1 | Infineon Tec... | 0.05 $ | 1000 | DIODE ARRAY GP 200V 250MA... |
BAS21UE6359HTMA1 | Infineon Tec... | 0.0 $ | 1000 | DIODE GP 200V 125MA SC74D... |
BAS21C-TP | Micro Commer... | -- | 1000 | DIODE ARRAY GP 250V 200MA... |
BAS21HMFHT116 | ROHM Semicon... | -- | 3000 | DIODE GEN PURP 200V 200MA... |
BAS283-GS18 | Vishay Semic... | 0.04 $ | 1000 | DIODE SCHOTTKY 60V 30MA S... |
BAS21W RVG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 250V 200MA... |
BAS21S RFG | Taiwan Semic... | 0.02 $ | 1000 | DIODE ARRAY GP 250V 200MA... |
BAS21TWQ-7 | Diodes Incor... | -- | 1000 | DIODE ARRAY GP 250V 200MA... |
BAS20W RVG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 150V 200MA... |
BAS29_D87Z | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 120V 200MA... |
BAS21J,115 | Nexperia USA... | 0.06 $ | 36000 | DIODE GEN PURP 300V 250MA... |
BAS21SW,115 | Nexperia USA... | 0.2 $ | 21383 | DIODE ARRAY GP 250V 225MA... |
BAS216,115 | NXP USA Inc | 0.0 $ | 1000 | DIODE GEN PURP 75V 250MA ... |
BAS21HT3G | ON Semicondu... | -- | 10000 | DIODE GEN PURP 250V 200MA... |
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