BAS286-GS08

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	50V
Current - Average Rectified (Io):	200mA
Voltage - Forward (Vf) (Max) @ If:	900mV @ 100mA
Speed:	Small Signal =
Current - Reverse Leakage @ Vr:	5µA @ 40V
Capacitance @ Vr, F:	8pF @ 1V, 1MHz
Mounting Type:	Surface Mount
Package / Case:	SOD-80 Variant
Supplier Device Package:	SOD-80 QuadroMELF
Operating Temperature - Junction:	-65°C ~ 150°C

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Introduction of BAS286-GS08

The BAS286-GS08 is a high performance, low-voltage, single phase, part-bridge rectifying diode specially designed for automotive applications. It has a high switching speed, low on-state voltage drop, and low leakage current, which make it more efficient than most other rectifiers on the market.

Application Field

The BAS286-GS08 device is designed for automotive applications such as energy storage and on/off power control. It can also be used in a number of other applications, including consumer electronics, lighting, DC-DC converters, and motor control systems.

Working Principle

The BAS286-GS08 diode works by allowing a current to flow in one direction and blocking a current that flows in the opposite direction. When forward biased, the diode\'s molecular structure aligns and allows current to flow freely. Reverse-biasing the diode causes it to become energized and behave like an open switch.The on-state voltage drop (VF) is the forward voltage of the diode, and is dependent on the current flowing through the diode and the type of material used. Lower VF results in higher efficiency and less power dissipation.The BAS286-GS08 has an ultra-low on-state voltage drop of only 0.15V, with a maximum forward current of 1A. This low VF results in improved efficiency and greatly reduced power dissipation. This also extends the device\'s life by reducing the diode\'s operating temperature.

Conclusion

The BAS286-GS08 is a single-phase bridge rectifying diode designed for automotive applications. Its low on-state voltage drop, low leakage current, and high switching speed makes it ideal for energy storage and on/off power control. The device has a maximum forward current of 1A and a low VF of 0.15V, or less, that contributes to better efficiency and extended device life.

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