BAS70-06-E3-18 Allicdata Electronics
Allicdata Part #:

BAS70-06-E3-18GITR-ND

Manufacturer Part#:

BAS70-06-E3-18

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ARRAY SCHOTTKY 70V SOT23
More Detail: Diode Array 1 Pair Common Anode Schottky 70V 200mA...
DataSheet: BAS70-06-E3-18 datasheetBAS70-06-E3-18 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 70V
Current - Average Rectified (Io) (per Diode): 200mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
Speed: Small Signal =
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Operating Temperature - Junction: 125°C (Max)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Description

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Diodes are key components commonly used in a variety of electronic devices, with rectifier diodes providing the basis of much of the current and voltage control technology used in the industry. The BAS70-06-E3-18 rectifier diode is a type of diode specifically designed to handle significantly high currents. It is often used for power regulation, overvoltage protection (clamping), and in rectification circuits.

The BAS70-06-E3-18 rectifier diode has a low dynamic resistance, and the high conductivity is highly advantageous in applications with high current or voltage. The improved dynamic resistance of this diode (compared to other rectifier diodes) helps reduce stress on components, such as capacitors and inductors, while also helping to reduce EMI radiation. The increased current capacity of the diode makes it suitable for applications such as power conversion, AC/DC, DC/DC, EMI filter applications, and so on.

The BAS70-06-E3-18 rectifier diode has a typical unidirectional voltage drop of 0.7V, meaning it does not have any reverse current. The model provides low capacitance and low gate turn-off threshold voltage, which offer increased efficiency and power performance in the diode array. The diode features f6A current, fast switching speeds, and low reverse leakage, making it ideal for high speed applications as well as low voltage rectification and current limiting.

In terms of operation, the BAS70-06-E3-18 rectifier diode array is constructed as several parallel stacks of diodes in a single package with an isolated bonding pad connection. The diode arrays can be used in various areas with different rectification requirements, including power transmission, medical applications, and other places where efficient power regulation is necessary. The typical junction-to-case thermal resistance of this diode is 0.44°C/W and the maximum case temperature is 150°C.

The BAS70-06-E3-18 rectifier diode array is used in a variety of applications as well as in electronic devices such as amplifiers, rectifiers, and converters. It is also commonly found in radiofrequency systems and other electronic systems. In this way, it helps to achieve power conversion with higher efficiency than single diode configurations, as well as providing improved EMI filtering. The low capacitance of the diode also reduces stress on components such as capacitors and inductors.

The applications for this type of diode vary according to the current rating and blocking voltage capability. It is typically used in switching power supplies and AC/DC rectification tasks. This diode can also be used in lighting circuits and other medium- to high-power applications.

In conclusion, the BAS70-06-E3-18 rectifier diode is a reliable diode array with a low dynamic resistance and fast switching speed, making it suitable for applications where efficient power regulation and high current or voltage is needed. It is often used in power conversion, rectification, and EMI filter applications, as well as in amplifiers, radiofrequency systems, and other electronic devices. The low capacitance and low gate turn-off threshold voltage of the device further improve efficiency and power performance.

The specific data is subject to PDF, and the above content is for reference

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