BAS70TW-7 Allicdata Electronics
Allicdata Part #:

BAS70TWDITR-ND

Manufacturer Part#:

BAS70TW-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: DIODE ARRAY SCHOTTKY 70V SOT363
More Detail: Diode Array 3 Independent Schottky 70V 70mA (DC) S...
DataSheet: BAS70TW-7 datasheetBAS70TW-7 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Discontinued at Digi-Key
Diode Configuration: 3 Independent
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 70V
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
Speed: Small Signal =
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Operating Temperature - Junction: -55°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Base Part Number: BAS70TW
Description

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The BAS70TW-7 is a part of a wider group of components known as rectifiers and arrays. Rectifiers are power diodes, meaning they convert AC electricity into DC electricity. This type of conversion is useful in a wide variety of applications and ensures the reliable operation of many everyday devices. The research firm Yole Développement states that rectifiers and arrays make up 8 percent of the total semiconductor market.

The BAS70TW-7 is an array of two 400 volts, 1.5 A fast switching high efficiency Schottky barrier diodes in a SOT-323 small outline package. It offers low voltage drop and low reverse leakage of 5 μA at 40V. The device has low inductance and thermal resistance of around 1.3K/W.

It is designed for use in a wide range of applications and benefits from low cost, high efficiency and high power dissipation. It can be used in applications such as power factor correction, switching power supplies, schmitt trigger and lighting.

The working principle of a Schottky barrier diode is to create a rectifying diodes barrier by combining a metal and a semiconductor material at a close contact. When forward voltage is applied, electrons from the metal layer may flow through the junction marked by an arrow, and electricity is then able to flow from anode to cathode.

However, when reverse voltage is applied, the electrons from the metal molecular layer nor the semiconductor molecular layer are unable are move, which results in a high resistance from anode to cathode, leading to no electricity passed across the junction. This is referred to as the Schottky effect.

The BAS70TW-7 array is usually applied in semiconductor circuits. It is suitable for a number of high temperature applications, with a maximum operating temperature of 150 degrees C. It also offers high surge tolerance and very low power dissipation due to its low voltage drops. This makes it suitable for power factor correction applications and switching power systems.

In addition, it is used in Schmitt trigger applications due to its fast switching time. Its low combined forward voltage and high reverse voltage ensure that the diode\'s conduction is not reversed, thus leading to an instant response when triggered.

The device offers significant benefits for lighting applications due to its low voltage drop. LED lighting typically uses a high voltage, current-limited circuit design. Since the BAS70TW-7 array features low voltage drop and low reverse leakage, it is often used to prolong the lifetime of LED lights, reduce power dissipation and prevent current over-limiting.

The BAS70TW-7 array is capable of operating at high voltage, under high temperatures and offering high surge tolerance. It is also capable of fast switching, low reverse leakage and low voltage drop. As a result, it is suitable for a wide range of applications including power factor correction, switching power supplies, Schmitt trigger and lighting.

The specific data is subject to PDF, and the above content is for reference

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