BC212

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	300mA
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):	15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 2mA, 5V
Power - Max:	625mW
Frequency - Transition:	--
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:	TO-92-3
Base Part Number:	BC212

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

BC212 is a type of NPN-silicon-based single bipolar junction transistor (BJT) widely used in electronic circuits. It is composed of three terminals, namely the base (B), collector (C) and emitter(E). Its distinguishing characteristics include its low current gain, low noise, and low collector to emitter saturation voltage. The BC212 is most commonly used to amplify and switch signals that are in the range of about 10 Hz to 10 MHz. Its characteristics offer excellent performance in linear Amplifiers, switches, and within various high frequency applications. As such, it can be successfully applied in transmitter\'s mixers and oscillators circuits, audio amplifiers, audio pre-amplifiers, as well as for UHF/VHF applications.BC212\'s maximum collector current is limited to 40 mA, and its maximum power handling capability is 500 mW. To understand the working principle of the BC212, it is important to understand the mechanics of the three main components of a BJT. The Base serves as the control element, while the Collector and the Emitter are the output elements. To switch the BC212 on, current is allowed to flow through the Base. Through the Base, electrons are supplied to the Collector, which cause a small current flow to the Emitter. This initial current causes a large current to flow between the Collector and the Emitter. When current is cut off, the BC212 turns off. The current amplification ratio of the BC212 is determined by the ratio of the collector current (Ic) and the base current (Ib). This is known as the HFE of the BC212, which stands for the "current gains". The HFE of the BC212 is typically measured between 1 and 300, depending on the model (note that the average current gains of the BC212 usually ranges from 50 to 250). The speed of the BC212 also affects its applications. Since it is an NPN BJT, its turn-on speed is much faster than its turn-off speed. This makes it ideal for switching applications, where a precise output pulse is needed at a specific rate. Furthermore, its low noise mode and low power consumption makes it the ideal transistor for amplifying relatively low-level signals, such as Radio Frequency (RF) or low-level audio signals. In conclusion, the BC212 single bipolar junction transistor is a versatile electronic device. It is suitable for both switching and amplifying applications, and can be used in a variety of high-frequency applications. Due to its low noise mode, low power consumption, and high current gains, it is a popular choice for audio amplifiers and other high-frequency applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description