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Transistors Bipolar (BJT) Single

BC214LB_J35Z application field and working principle

BC214LB_J35Z are one type of Transistor-Bipolar Junction Transistor (BJT). These transistors are two-terminal active devices (three-terminal devices because of their collector lead) that are manufactured in several types including NPN, PNP and complementary. PNP transistors have a different structure and working principle than NPN transistors.

BC214LB_J35Z are mainly applied as amplifiers. Specifically, an NPN transistor is usually in the saturation region when it is used as an amplifier. NPN transistors act as an open switch when the base-emitter voltage, V BE is less than the base current (I B ). When the base-emitter voltage, V BE is greater than the base current (I B ), the transistor is said to be in the active region. This is the region in which the transistor is used as an amplifier. The four different operating regions of a NPN transistor are defined in Figure 1.

The common-emitter configuration is the most useful and most popular transistor configuration that is used in amplification. The common-base configuration is also an important configuration but it is mainly used in switching applications.

Working Principle of an NPN Transistor

The working principle of an NPN transistor is mainly based on the fact that when the base-emitter voltage, V BE is greater than the base current, I B the transistor is said to be in the active region. When the transistor is in the active region, the collector-emitter current, I CE increases exponentially. This result can be explained in the following manner.

In the active region, there is a non-uniform field around the base-emitter junction. This field is said to be \'non-uniform\' because its strength is different in different parts. In most cases, the field near the base is stronger than that near the emitter. This non-uniform field generates a potential difference across the base-emitter junction. This potential difference is known as the base-emitter voltage, V BE.

Now, when the base current, I B is increased, it results in a greater potential difference, which further increases the field strength around the base-emitter junction. This further increases the base-emitter voltage, V BE. Thus, as the base current, I B is increased, it results in an increase in the collector-emitter current, I CE . This is the basic principle behind the working of an NPN transistor.

BC214LB_J35Z are mainly used for switching and amplifying electronic signals. Since they come in several types and configurations, they can be used in a wide range of applications. Their size and low cost make them ideal for applications such as amplifiers, power supplies, light sensing, audio systems and many other applications.

Conclusion

BC214LB_J35Z are a type of Transistor-Bipolar Junction Transistors (BJT). They are usually used as amplifiers and come in various types and configurations. Their size and low cost make them ideal for several applications. The working principle of an NPN transistor is based on the fact that when the base-emitter voltage, V BE is greater than the base current (I B ), the transistor is said to be in the active region. This is the region in which the transistor is used as an amplifier.

Reference

Embedded Lab. (2019). An Overview of The Different Types Of Transistors. Available at: https://www.embedded-lab.com/articles/transistor/an-overview-of-the-different-types-of-transistors/ [accessed 14/10/2020].

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