BC212B_D26Z

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The BC212B_D26Z is a single bipolar junction transistor (BJT) commonly used in a variety of applications. It is typically used in amplifiers, signal processors, low-frequency oscillators, ripple elimination and signal switching. The BC212B_D26Z is designed for operation in the rangeof -55 to 125 degrees Celsius.

The BC212B_D26Z features a collector-emitter voltage (VCEO) of 80V, a collector current (IC) of 1A and a power dissipation of 1W. It has a beta (hFE) of 50-300 and an increased capability to handle high voltages and currents. Additionally, the BC212B_D26Z has a wide range of available packages, including SMD, TO-92, TO-220, TO Radio and many others.

The operation of the BC212B_D26Z is based on the principle of semiconductor devices. In a bipolar junction transistor, a small turning current applied to the Base-Emitter junction can control the flow of current between Collector-Emitter junction. The operating voltage range of the BC212B_D26Z is from -55 to 125 degrees Celsius, which makes it ideal for many applications.

The BC212B_D26Z has the ability to provide excellent performance for amplifying, switching, and buffering signals in a wide range of applications. It is ideal for oscillators, signal amplifiers, voltage regulators and audio applications. Additionally, it can be used in power supply circuits, audio amplifiers and power amplifiers.

The BC212B_D26Z also helps to reduce circuit complexity and cost since it can replace multiple identical transistors, and can be used with fewer external components. Additionally, the choice of packages allows the flexibility to design with optimal shape and functionality.

In conclusion, the BC212B_D26Z is an excellent choice for a wide range of applications, such as amplifiers, signal processors, low-frequency oscillators, ripple elimination, signal switching, and many others. The device has a wide range of available packages, excellent performance and increased capability to handle high voltages and currents. Its operation is based on the principle of semiconductor devices, and it can help to reduce circuit complexity and cost.

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