Allicdata Part #: | BC213L_J35Z-ND |
Manufacturer Part#: |
BC213L_J35Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 30V 0.5A TO-92 |
More Detail: | Bipolar (BJT) Transistor PNP 30V 500mA 200MHz 625m... |
DataSheet: | BC213L_J35Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 2mA, 5V |
Power - Max: | 625mW |
Frequency - Transition: | 200MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | BC213 |
Description
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The BC213L_J35Z is a high digital transistor that belongs to the transistors - bipolar (BJT) - single category. It has a wide range of uses for both digital and analog applications, and its design is suited for use in low-power applications.The BC213L_J35Z has a low collector-emitter saturation voltage, and its DC current gain can reach up to 200. It also has a high collector-base breakdown voltage of 40V, and an emitter-base breakdown voltage of 5V. It is also capable of operating at a wide range of temperatures, from -65°C to 150°C.The BC213L_J35Z is typically used in applications such as amplifiers, oscillators, high-frequency switching circuits and other low power applications. Moreover, it has a wide range of uses in digital and analog applications, such as signal processing, microcontrollers, GPU processing, video interfaces and more.The working principle of the BC213L_J35Z is based on the fact that when an electric current passes through the Collector-Emitter (CE) junction of the transistor, the current is amplified in the Emitter-Base (EB) junction of the transistor. This amplification process is known as the Transistor Action effect. When a small electric current flows through the EB junction, it allows for a larger electric current to flow through the CE junction. This enables the transistor to amplify the input signal, and this allows it to be used in a variety of applications.The BC213L_J35Z can also be used as an amplifier in order to increase the signal strength of an audio signal. It can also be used as a switch in order to control the power supply of a device. It can also be used as an oscillator in order to generate a steady and consistent frequency. Furthermore, it can be used as a signal processor in order to filter out unwanted noise and other audio interferences.In summary, the BC213L_J35Z is a versatile transistor, capable of being used in both digital and analog applications, and its design is suited for use in low-power applications. It has low collector-emitter saturation voltage, and its DC current gain can reach up to 200. It also has a wide operating temperature range, from -65°C to 150°C. In addition, it is capable of being used as an amplifier, oscillator, switch and a signal processor, depending on the needs of the application.The specific data is subject to PDF, and the above content is for reference
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