BC214L_L34Z Allicdata Electronics
Allicdata Part #:

BC214L_L34Z-ND

Manufacturer Part#:

BC214L_L34Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 30V 0.5A TO-92
More Detail: Bipolar (BJT) Transistor PNP 30V 500mA 200MHz 625m...
DataSheet: BC214L_L34Z datasheetBC214L_L34Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
Power - Max: 625mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: BC214
Description

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The BC214L_L34Z is a single bipolar transistor with a wide range of applications. This device is a general-purpose amplifier with a drive-level of around 30mA. It is mainly used in audio stages and in circuits requiring high frequency performance, such as the switching of low-level signals. The BC214L_L34Z is also commonly used in high-speed modulators and in instruments such as oscilloscopes and test instrumentation. It has a maximum power dissipation of 450mW, including an operating temperature range from -55°C to +125°C.

The BC214L_L34Z is composed of two parts: the emitter and the collector. The emitter is a P-type material, while the collector is an N-type material. These materials are connected together in such a way that the majority carriers (electrons in the case of N-type materials and holes in the case of P-type materials) flow between them. This forms the base-emitter junction.

When a voltage is applied to theBase-Emitter junction of the transistor, a current starts to flow. This current is known as the “collector current.” The collector current is controlled by the base-emitter voltage and the saturation current of the Base-Emitter junction. The saturation current is dependent on the magnitude of the applied voltage, so a higher voltage leads to a higher saturation current.

Once the collector current has been established, the transistor can be used as an amplifier. This is because the collector current can be modulated by controlling the base-emitter voltage. When the base-emitter voltage is increased, the collector current increases and causes a greater signal amplification. When the base-emitter voltage is decreased, the collector current decreases and causes a decrease in the signal amplification.

The BC214L_L34Z has a gain of 120 with 1.2 V at a collector current of 30mA. The maximum collector current is 30mA and the maximum power dissipation is 450mW. It features a breakdown voltage of 6V and a high hFE of 30. The BC214L_L34Z is available in a variety of packages, such as TO-92, SOT-223, SOT-7, DIP-8 and others.

The BC214L_L34Z is a versatile and reliable single bipolar transistor with a wide range of applications. It is commonly used in audio stages, high speed modulators, and in test instrumentation. The device has a gain of 120 and a high hFE of 30, allowing it to produce a higher signal amplification. The device is available in a variety of packages, making it well-suited for a broad range of applications.

The specific data is subject to PDF, and the above content is for reference

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