
Allicdata Part #: | BC212L_D27Z-ND |
Manufacturer Part#: |
BC212L_D27Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 50V 0.3A TO-92 |
More Detail: | Bipolar (BJT) Transistor PNP 50V 300mA 200MHz 625m... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 300mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 2mA, 5V |
Power - Max: | 625mW |
Frequency - Transition: | 200MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | BC212 |
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BC212L_D27Z Application Field and Working Principle
BC212L_D27Z is a type of Bipolar Junction Transistor (BJT), specifically a single-emitter silicon NPN (negative-positive-negative) type device. It was commonly used in signal shaping and amplifier circuits, as well as in intermediate frequency (IF) amplifiers.
Overview
The BC212L_D27Z is a silicon NPN transistors designed to provide wide bandwidth, low distortion, and very high gain. Its wide bandwidth, coupled with its intrinsically low ‘distortion-noise’ figure makes it very suitable for audio performance applications. It also features a breakdown voltage rating of 80 volts. The BC212L_D27Z is made of polysilicon, resulting in increased reliability and performance.
Applications
The BC212L_D27Z is primarily used in signal processing and amplifier applications. It was used in audio amplifiers, signal conditioners, and transceivers, as well as being a key component in an Intermediate Frequency (IF) amplifier. It was also used in analog signal processing systems, computer interface circuits, audio pre-amps and for general signal amplification.
The BC212L_D27Z also found use in biasing circuits, used for controlling current output in digital signal processing systems. Its wide gain bandwidth and linearity make it ideal for signal processing in digital systems.
Working Principle
BJTs are formed from three layers of semiconductor material, with the layers connected in a way that allows current to flow through the layers. This is called the ‘base-emitter-collector’ structure.
In NPN type transistors, the amount of current that flows between the base and collector is controlled by the amount of current flowing between the base and emitter. This is because the base-emitter current controls the base-collector current, allowing the transistor to act as a switch.
In the BC212L_D27Z, the breakdown voltage of 80 volts allows for high voltage applications. The base-emitter-collector structure and wide gain bandwidth result in improved linearity and high power efficiency.
Conclusion
The BC212L_D27Z is a single-emitter NPN type Bipolar Junction Transistor (BJT) commonly used in signal processing and amplifier applications. It’s wide gain bandwidth, combined with its intrinsic low distortion figure, makes it suitable for audio performance applications. The BC212L_D27Z’s breakdown voltage rating of 80 volts allows it to be used in high voltage applications. Its base-emitter-collector structure allows current to flow between the three layers and allows the transistor to act as a switch.
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