BC337ZL1 Allicdata Electronics
Allicdata Part #:

BC337ZL1-ND

Manufacturer Part#:

BC337ZL1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 45V 0.8A TO-92
More Detail: Bipolar (BJT) Transistor NPN 45V 800mA 210MHz 625m...
DataSheet: BC337ZL1 datasheetBC337ZL1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 625mW
Frequency - Transition: 210MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: BC337
Description

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The BC337ZL1 is a single-bipolar junction transistors (BJT), used for various electronic applications. It is manufactured and distributed by NXP Semiconductors, a market leader in semiconductor technology. This article will discuss the BC337ZL1 application field and working principle.

Application Fields of the BC337ZL1

The BC337ZL1 is a versatile transistor with a wide range of applications. It can be used in a number of areas such as audio power amplifiers, DC and AC motor commutation, switchmode power supplies, as well as switching and driving applications. It is also suitable for small-signal NPN applications, where low leakage current is required. The maximum current that this transistor can handle is 500mA, with collector-emitter breakdown voltage of 45V.

Working Principle

The BC337ZL1 utilizes the same principles as other single-bipolar junction transistors. It uses a three-layer semiconductor device with a P-N-P or N-P-N structure. Each of the layers is made of a different semiconductor material, with a different doping level. The base junction, or middle layer, acts as a switch to modulate the current flow between the emitter (input) and the collector (output).

When voltage is applied to the base junction of the transistor, electrons in the base layer become thermally excited and form a conductive channel between the emitter and collector. This creates a flow of current from the emitter to the collector. By varying the base voltage, we can also vary the current flow. Once the applied voltage reaches the base-emitter threshold voltage, the transistor will be fully on and operate as a switch.

The BC337ZL1 is also designed for higher switching speeds, low saturation voltage, and low noise characteristics. It also has a high surge capability up to 500mA, which makes it suitable for a variety of applications.

Conclusion

The BC337ZL1 is a single-bipolar junction transistors (BJT), manufactured and distributed by NXP Semiconductors. It can be applied for audio power amplifiers, DC and AC motor commutation, and switchmode power supplies. Its working principles are the same as other transistors, utilizing a three-layer semiconductor device with a P-N-P or N-P-N structure. When voltage is applied to the base junction, a flow of current is created from the emitter to the collector. This makes the BC337ZL1 suitable for a variety of applications, with its high surge capability, switching speed and low noise.

The specific data is subject to PDF, and the above content is for reference

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