BC33816TA

BC33816TA is a single bipolar junction transistor (BJT) which is typically used in switching and amplification applications. It is a NPN small signal silicon transistor with a maximal collector current of 400 mA and a maximal power dissipation of 625 mW. The transistor comes in two dual-in-line packages, SOT-323 and SOT-666. It can operate with a wide range of emitter-collector voltages, between 30 to 80V.

Specifications:

• Collector Base Voltage: up to 80V
• Collector Emitter Voltage: up to 80V
• Collector Current: up to 400mA
• Power Dissipation: 625mW
• Gain Bandwidth Product: 625MHz
• Temperature Range: -55°C to 150°C

Application Field:

BC33816TA can be used in many different applications. It can be used as a switch, or as an amplifier in radio-frequency or audio-frequency applications. It is used as a low-noise amplifier in receivers and transceivers. It can also be used as an active element in analog circuits, such as amplifiers, oscillators, and filters. It can be used in switching power supply applications due to its low power dissipation.

Working Principle:

Bipolar junction transistors (BJTs) are three-terminal devices composed of two p-n junctions. They are widely used in switching and amplification applications. The BC33816TA is an NPN transistor, meaning that it has two p-n junctions, with the n-type material between the source and collector and the p-type material between the base and collector. When voltage is applied to the base of the transistor, it will allow current to flow from the collector to the emitter. This is the transistor\'s primary operating principle.

When current flows between the collector and emitter, it will create a magnetic field which can also be used to amplify signals, allowing the transistor to be used as an amplifier. When the base voltage of the transistor is increased, the current gain, or amplification factor, of the device increases. This provides the transistor with the ability to amplify signals with a wide range of frequencies.

The BC33816TA is capable of handling higher voltages and currents than most other transistors, which makes it suitable for a wide range of applications. It is also very reliable, with a typical failure rate of less than 0.1%.