BC338-25 B1G Allicdata Electronics
Allicdata Part #:

BC338-25B1G-ND

Manufacturer Part#:

BC338-25 B1G

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: TRANSISTOR, NPN, 25V, 0.8A, 160A
More Detail: Bipolar (BJT) Transistor NPN 25V 800mA 100MHz 625m...
DataSheet: BC338-25 B1G datasheetBC338-25 B1G Datasheet/PDF
Quantity: 1000
5000 +: $ 0.02415
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 5V
Power - Max: 625mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92
Description

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The BC338-25 B1G is a transistor categorized under Transistors – Bipolar (BJT) – Single. It is a general-purpose NPN silicon switching transistor with a low collector-emitter saturation voltage. This transistor type is designed for use at a collector current of up to 25A and an occasional maximum pulse current of 250A. It is suitable for use as a low-noise switch in general purpose switching and amplifier applications.

Features:

  • Low collector-emitter saturation voltage
  • Single-ended or push-pull operation
  • Low capacitance, full insulation
  • High frequency operation, low noise
  • High transition frequency
  • TTL/CMOS Compatible Input Level

Applications:

  • DC TO AC Switching Applications
  • High-Frequency Amplifiers
  • RF Amplifier and Oscillators
  • Telecommunication Equipment
  • Logic Interface Circuits
  • Consumer Electronics
  • Power Supply Circuits

Working Principle:

The BC338-25 B1G transistor is an NPN type transistor and can be used in both single-ended and push-pull configurations. It has a low collector-emitter saturation voltage and is designed for use in switching and amplifier applications. The transistor consists of three layers, the emitter, base, and collector. The emitter is connected to the positive voltage source. The base voltage is equal to the collector voltage, and the current flow through the base controls the current flow through the collector. If a base current is applied, holes present in the base will start to join those present in the collector region. This process is known as “base current inducing”, and it is why BJT transistors are sometimes known as “current amplifiers”. The collector current is then amplified and does not depend on the base current and hence can be controlled using the base current.

The BC338-25 B1G transistor is also capable of handling very high frequencies as it features a high transition frequency. This makes it suitable for use in amplifier applications as well as switching applications. It is also compatible with TTL/CMOS logic levels, making it suitable for use in logic interface circuits. It has a high current gain, making it an excellent choice for current amplification applications. Additionally, due to its full insulation, it is suitable for use in power supply circuits.

The specific data is subject to PDF, and the above content is for reference

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