BC337,116 Allicdata Electronics
Allicdata Part #:

BC337,116-ND

Manufacturer Part#:

BC337,116

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS NPN 45V 0.5A TO-92
More Detail: Bipolar (BJT) Transistor NPN 45V 500mA 100MHz 625m...
DataSheet: BC337,116 datasheetBC337,116 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 625mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: BC337
Description

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The BC337-116 is a PNP medium power, low noise, general purpose transistor. It has a power gain of up to two hundred and fifty. This means that it has a high current gain suitable for a variety of applications.

The BC337-116 transistor is divided into three categories based on the current rating that it can handle. The first category is the NPN type which can handle up to 50mA and the second category is the PNP type, which can handle up to 100mA. The last category is the bipolar junction transistor (BJT) type which can handle up to 300mA.

The BC337-116 transistor is mainly used for linear power amplifier applications, especially for radio frequency applications. It is also commonly used in pre-amplifier circuits, audio amplifiers, switching circuits, and interface circuits. This versatile transistor can also be used in many other applications such as Darlington transistor circuits, logic circuitry, and microcontroller applications.

The BC337-116 transistor is a bipolar junction transistor (BJT). It consists of two semiconductor junctions: an N-type emitter junction and a P-type base junction. The flow of current through the transistor depends on its base current, and the electrical signal is passed through it. When a voltage is applied between its base and emitter terminals, electrons are drawn out of the emitter, allowing current flow through the collector terminal. This is known as the emitter-base bias. When the collector voltage is higher than the emitter voltage, current begins to flow from the collector to the emitter, and the transistor is said to be in the active region.

The maximum power dissipation of the BC337-116 transistor is 200 mW and the collector-emitter voltage is up to 50V. The maximum safe operating temperature is up to 150°C. The BC337-116 is available in a variety of packages, including TO-92, SOT-223, SOT-23, and SOT-223L. It is also available in an exposed-pad version for improved thermal performance.

In summary, the BC337-116 is a single bipolar junction transistor that can be used in a variety of applications. Its collector current can handle up to 300mA and its maximum power dissipation is 200mW. Its package is available in TO-92, SOT-223, SOT-23, and SOT-223L versions. This versatile transistor can be used for radio frequency applications, pre-amplifier circuits, audio amplifiers, switching circuits, interface circuits, logic circuitry, and microcontroller applications.

The specific data is subject to PDF, and the above content is for reference

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