BC546BTAR Allicdata Electronics
Allicdata Part #:

BC546BTAR-ND

Manufacturer Part#:

BC546BTAR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 65V 0.1A TO-92
More Detail: Bipolar (BJT) Transistor NPN 65V 100mA 300MHz 500m...
DataSheet: BC546BTAR datasheetBC546BTAR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: BC546
Description

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BC546BTAR, a bipolar transistor (BJT) single, is a high voltage NPN transistor used in applications such as amplifiers, radio frequency (RF) amplifiers and switching applications. It has a collector current up to 625mA and a power dissipation of 500mW. The maximum voltage from collector to emitter is 45V. The minimum voltage from collector to base is 5V and the maximum voltage from collector to base is 50V.

The working principles of the BC546BTAR are based on the semiconductor material used in the transistor. It is constructed of a single layer of base material and two layers of n-type semiconductor material. This combination increases the current between the collector and emitter. The base-collector junction has a large resistive region so current flows between the emitter and the collector when a voltage is applied. The resistor between the base and the emitter limits the current.

This high voltage NPN bipolar transistor can be used in a variety of applications which require large current and power handling capability. For example, it is used in amplifier circuits in which large transistors are needed to support high current loads. It is suitable for use as switches in high power circuits and it can also be used to amplify signals in radio frequency (RF) applications. It is also used in switching circuits to control currents.

In addition to the applications mentioned above, the BC546BTAR can also be used in current sensing applications. It can be used to detect changes in current flow and thus can be used to trigger an alarm or a switch circuit. It can also be used as an amplifier for radio frequency (RF) applications. This semiconductor device is often used as a voltage amplifier or an interface circuit between a digital and an analog system.

The BC546BTAR is a reliable and versatile high voltage NPN bipolar transistor which can be used in a variety of applications. It is designed to handle high current and power loads and can be used to amplify signals in radio frequency (RF) applications. It is also suitable for use as a current sensing device, as an amplifier and as a switch in switching circuits. The device is very reliable and is used in many applications.

The specific data is subject to PDF, and the above content is for reference

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