Allicdata Part #: | BC549B_J35Z-ND |
Manufacturer Part#: |
BC549B_J35Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 30V 0.1A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 30V 100mA 300MHz 500m... |
DataSheet: | BC549B_J35Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2mA, 5V |
Power - Max: | 500mW |
Frequency - Transition: | 300MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | BC549 |
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Bipolar junction transistors (BJTs) are a type of semiconductor device that are widely used in a variety of different applications. The BC549B_J35Z is a single-type BJT, designed for medium power consumption and voltage applications. It is also built with low noise and is capable of handling up to 10A of current. This makes it an ideal choice for applications that require high power consumption or require higher levels of performance.
The BC549B_J35Z is constructed using a sandwich structure of two P-type and two N-type layers., with a thin interconnection between them. This junction can be used to control a current flowing between two electrodes, and it is this property that makes the BJT a useful device. The base is one of the electrodes and is used to control the current flowing through the collector and emitter. The collector is the negative side of the device and the emitter is the positive side.
The working principle of a BJT is quite simple. When current flows through the base, the electrons are attracted to the collector and holes to the emitter. This creates a voltage drop across the base-emitter and the collector-emitter junctions, which causes current to flow between the collector and emitter. The current flowing from the collector to the emitter is controlled by the current flowing through the base, thus allowing the BJT to be used to control current.
BC549B_J35Z transistors are suitable for a range of application fields. These include switching and audio amplifiers, active filters, power amplifier circuits, DC to DC converters and more. They are also suitable for a wide range of power consumptions, from small signaling circuits to high-power applications. As a result, they are widely used in industrial, automotive and consumer electronics applications.
The BC549B_J35Z has several advantages over other transistors. It has a low forward voltage drop and is relatively easy to build with. It is also very reliable and efficient, which makes it a great choice for applications that require high performance. It also provides good gain and better current handling than many other transistors.
In summary, the BC549B_J35Z is a single-type bipolar junction transistor designed for medium power consumption and voltage applications. It is built with low noise and is capable of handling up to 10A of current. It is suitable for a range of applications, from small signaling circuits to high-power applications, and has several advantages over other transistors such as a low forward voltage drop, good gain and better current handling. As a result, it is widely used in industrial, automotive and consumer electronics applications.
The specific data is subject to PDF, and the above content is for reference
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