BC546TF Allicdata Electronics
Allicdata Part #:

BC546TF-ND

Manufacturer Part#:

BC546TF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 65V 0.1A TO-92
More Detail: Bipolar (BJT) Transistor NPN 65V 100mA 300MHz 500m...
DataSheet: BC546TF datasheetBC546TF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: BC546
Description

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The BC546TF is a single transistor specifically designed for use in general purpose amplification and switching applications. It is a through hole device with a general purpose NPN type construction and is classified as a Bipolar Junction Transistor (BJT).

The BC546TF is a NPN type transistor which is commonly used in electronic circuits. It has an amplification factor (Hfe) of 600 and a collector dissipation of 500mW. It is designed to operate at frequencies up to 100MHz, making it suitable for a wide range of applications. The BC546TF has a maximum collector-emitter voltage of -45V and a maximum collector current of 500mA.

The BC546TF is a highly reliable component with low operating temperature and a long operational life. It is suitable for use in both low and high power applications and is suitable for use in applications subject to electrical and mechanical shock. It is also capable of handling temperatures up to 125°C.

The BC546TF is able to handle large signal currents due to its high input impedance and low gain and output resistance. This makes it well suited for use in amplifier and switching applications. The device also has a low-voltage operation, making it suitable for use in applications with low power consumption.

The BC546TF has a simple working principle; it works by controlling the current flow between the collector and emitter by controlling the movement of electrons within the device. The device uses a NPN type construction, which involves a semiconductor device with two pn-junctions, or two N-type semiconductors combined with a P-type semiconductor. The semiconductor material used in the BC546TF is silicon.

When the BC546TF is used as an amplifier, the base is connected to the input signal and the collector is connected to the load, then the base-emitter voltage is set in such a way that the output current is regulated by the base current and gain of the transistor. Furthermore, the device can also be used as a switch, where the base current is used to turn the device on and off. The device can be used as an inverter, where the output current is proportional to the input current.

The BC546TF can be used in a wide range of applications due to its general purpose construction, simple working principle and reliable performance. These include switched power supplies, voltage regulators and amplifiers. The device is also widely used in automotive and consumer electronic equipment such as radios, televisions and audio systems. The BC546TF is also often used in industrial equipment and robotics.

The BC546TF is a highly reliable single transistor widely used for its general purpose in amplification and switching applications. It is a through hole device with low power consumption, high reliability and a long operational life. It is capable of handling high input currents and has an amplification factor of 600, making it suitable for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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