BC548B

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	30V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 500µA, 10mA
Current - Collector Cutoff (Max):	15nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 2mA, 5V
Power - Max:	625mW
Frequency - Transition:	300MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:	TO-92-3
Base Part Number:	BC548

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BC548B Introduction:

BC548B is a general-purpose NPN silicon planar transistor that is widely used in modern electronic circuits. It offers low current noise levels and good frequency response, which makes it suitable for a wide range of applications, such as switching and linear amplification. The acronym BC548B stands for Bipolar Complementary Silicon Junction Transistor.

BC548B Application Fields:

BC548B is one of the most widely used transistors, employed in a large variety of electronic applications where a low noise, low frequency NPN silicon transistor is needed. It is also used in common base configurations which require a higher current gain. Some of the most common uses for this transistor include building audio amplifiers, small logic circuits using logic gates, audio preamplifiers, building switching circuits and many more.

BC548B Working Principle:

The BC548B transistor is an NPN (Negative-Positive-Negative) silicon planar transistor. It has three distinct terminals – the collector (C), base (B) and emitter (E). The majority of the current flow takes place between the collector and emitter, while the base controls the current flow between the collector and emitter.The emitter is connected to the negative terminal of the power supply (ground), while the collector is connected to the positive side of the power supply. When a voltage is applied at the base junction, a current will flow from the emitter to the collector causing the transistor to turn ‘on’, allowing the current to flow. When the voltage applied to the base is removed, the current flow stops and the transistor will turn ‘off’. The current flow, or gain, between collector and emitter is determined by the relationship between the collector current, Ic, and the base current, Ib. This is known as the ‘Current Gain (Hfe)’ and is expressed by the equation,

Hfe = Ic / Ib

Where, Hfe is the current gain, Ic is the collector current and Ib is the base current. The typical maximum current gain for the BC548B is 310, meaning that for every one milliamp that flows through the base, 310 milliamps can flow from the collector to the emitter.

Conclusion:

BC548B is a widely used NPN silicon planar transistor that is popular in a wide range of electronics applications. Its low current noise levels and good frequency response makes it suitable for many types of projects. It is used in circuits that require an NPN silicon transistor, such as switching and linear amplification, as well as common base configurations requiring a higher current gain. Its principle operation relies on the ‘Current Gain (Hfe)’ equation, which dictates the current flow between the collector and emitter. Thus, the BC548B offers excellent performance in a wide range of applications.

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