BC547TF Allicdata Electronics
Allicdata Part #:

BC547TF-ND

Manufacturer Part#:

BC547TF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 45V 0.1A TO-92
More Detail: Bipolar (BJT) Transistor NPN 45V 100mA 300MHz 500m...
DataSheet: BC547TF datasheetBC547TF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: BC547
Description

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Bipolar junction transistors, most commonly known as BJT, are three-terminal active semiconductor devices composed of either two p-n-p or two n-p-n transistors connected together. The BC547TF is a type of transistors referred to as PNP and NPN. It is categorized as a single transistor type.

BC547TF transistors, with the highest collector current rating of 625mAh, are designed for use in a wide variety of applications, including low-level audio amplifiers, pulse generation circuits, low-speed switching, and pre-amplifiers. The transistor’s high current rating, wide gain range and small package facilitates use in various low cost applications that require low levels of power dissipation.

BC547TF transistors have a maximum collector-emitter voltage rating of 300V and a maximum collector current of 625mAh. The transistor\'s saturation voltage is typically around 0.2V. The maximum power rating of these transistors is 625mA, indicating the highest power that can be dissipated without damaging the transistor. It has a current gain ranging from 70 to 800, allowing it to be utilized over a wide range of amplification applications.

The working principle of the BC547TF is based on the process of injecting minority carriers into the emitter-base junction by injecting electrons into the base. When a voltage is applied to the base-emitter junction, it creates a potential barrier, allowing electrons to pass through and enter the base. As a result, the current flow in the collector-emitter circuit increases, thereby providing the desired amplification. The transistor also acts as a current amplifier, with the amount of current amplified being proportional to the collector current.

The BC547TF transistors are designed for operations at temperatures ranging from -65°C up to +150°C, enabling their use in a wide array of environments. Its strong dielectric strength and resistance to heat and vibration make it ideal for use in applications requiring the highest levels of reliability. Moreover, these transistors feature antistatic protection, meaning they can be used in applications with low ESD or electrostatic discharge.

In summary, BC547TF transistors are single-transistor type, can be used for various amplification applications due to their wide gain range and small package. They also come with robust features such as a high collector current rating, wide temperature range and strong dielectric strength, making it suitable for use in various low cost applications.

The specific data is subject to PDF, and the above content is for reference

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