BC548BTFR Allicdata Electronics
Allicdata Part #:

BC548BTFR-ND

Manufacturer Part#:

BC548BTFR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 30V 0.1A TO-92
More Detail: Bipolar (BJT) Transistor NPN 30V 100mA 300MHz 500m...
DataSheet: BC548BTFR datasheetBC548BTFR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: BC548
Description

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BC548BTFR is a bipolar junction transistor (BJT) which belongs to the Single family. This transistor is widely used in various applications due to its low cost and compatibility. It is mostly used as a switching device or an amplifier.

Description of BC548BTFR

BC548BTFR is a NPN bipolar junction transistor. This means it has three connecting terminals: the base, collector and emitter. TheBase pin is usually used for controlling the flow of current, while the Collector pin is used as a power output and the Emitter pin gives out the current. The transistor has an active region that can be entered by providing a small current which can control a large current flowing from the Collector to the Emitter.

The transistor comes in a TO-92 package. It has a power dissipation (PD) of 500mW and its critical frequency (fT) is 200MHz. It has a maximum DC current gain of 300 and its maximum collector-emitter voltage (VCE) is 40V. BC548BTFR is used in both low and high power applications because it is capable of dissipating up to 500mW of power.

Applications of BC548BTFR

BC548BTFR is used in many applications in both digital and analog fields. Some of the digital applications include oscillators, logic gates,decoders, and shift registers. In analog circuits BC548BTFR is mostly used in amplifiers, tuners, and solar panels. It can also be used in amplifier circuits to improve its performance by reducing noise and distortion. Its low price makes it a popular choice in applications that require a low-cost transistor.

BC548BTFR is also used in low-power synchronous applications as it is capable of operating at low supply voltages. This makes it ideal for wired applications such as telecommunication, automotive, consumer electronics and computer systems. This transistor is also used in low-power battery-operated devices such as cell phones and PDAs.

Working Principle of BC548BTFR

The principle of operation of the BC548BTFR is based on the bipolar junction transistor (BJT). The BJT is a three-terminal device that works on the principle of a small current controlling a larger current. This is known as transistor or current gain.

The transistor is made up of two PN junctions. An emitter-base junction and a collector-base junction. The emitter-base junction is reverse biased while the collector-base junction is forward biased. From this setup a small current is applied to the base terminal which allows a larger current to flow from the collector to the emitter.

This larger current can then be used to amplify a signal or switch a load on and off. The transistor will switch on when the voltage applied to the base terminal is sufficient to overcome the base-emitter voltage and cause a current to flow through the NPN transistor. When the voltage is removed the transistor will switch off.

BC548BTFR is widely used in different applications due to its low price, high performance and compatibility. It is used as an amplifier, switching device, oscillator or in synchronous low-power circuits. It is a great choice for many applications as it is capable of dissipating up to 500mW of power and has a maximum collector-emitter voltage of 40V.

The specific data is subject to PDF, and the above content is for reference

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