BC55-16PA,115 Allicdata Electronics
Allicdata Part #:

1727-2344-2-ND

Manufacturer Part#:

BC55-16PA,115

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANSISTOR NPN 60V 1A SOT1061
More Detail: Bipolar (BJT) Transistor NPN 60V 1A 180MHz 650mW S...
DataSheet: BC55-16PA,115 datasheetBC55-16PA,115 Datasheet/PDF
Quantity: 9000
3000 +: $ 0.05433
6000 +: $ 0.04890
15000 +: $ 0.04346
30000 +: $ 0.04075
75000 +: $ 0.03613
Stock 9000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 650mW
Frequency - Transition: 180MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UDFN
Supplier Device Package: 3-HUSON (2x2)
Description

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BC55-16PA,115 Application Field and Working Principle

BC55-16PA,115 is a type of transistors classified as bipolar junction transistors (BJT) specifically single. This particular type of transistor belongs to the bipolar line of transistors and such belong to the family of transistors that dates back to as early as 1948. This transistor has its origins from the University of Manchester and it consists of two p-n junctions. It has three leads- the collector or input lead, the base or control lead, and the emitter or output lead. This type of transistor is used in many applications and is most common in small signal amplifiers and switching applications.

Characteristics

As with most BJT transistors, the BC55-16PA,115 has many characteristics that are typical in common applications. It has a collector current of 16A and a power dissipation of 115W, both of which make it suitable for most applications that require large current gain. It has a voltage gain of 8V and a response time of 10ns, making it suitable for working with high-speed digital circuits. Furthermore, it has a breakdown voltage of 50V, and an operating temperature range of -40 to 110°C, making it suitable for many harsh environments.

Applications

The BC55-16PA,115 is mainly used in applications that require a large current gain. These applications range from power supplies, switching power amplifiers, low noise amplifiers and audio amplifiers, to automotive and aviation electronics. Additionally, this type of transistor can be used in optical transceivers and laser-based systems. Due to its breakdown voltage of 50V, the BC55-16PA,115 can also be used in applications that require a higher voltage, such as power supplies and automotive alternators.

Working Principle

The principle of operation of the BC55-16PA,115 is based on the structure and nature of its construction. Being a bipolar transistor, the transistor consists of two p-n junctions which are the base-emitter junction (BE) and the base-collector junction (BC). The current gain is determined by the current flowing through the base of the transistor. When a small current is applied to the base, a larger current is allowed to flow from the collector to the emitter. This larger current is amplified by the transistor and can be used in a variety of applications where a large current is needed, such as in amplifiers and switching circuits.

Conclusion

The BC55-16PA,115 is a single bipolar transistor with a collector current of 16A and a power dissipation of 115W, making it ideal for most applications requiring a large current gain. Additionally, it has a voltage gain of 8V and a response time of 10ns, making it suitable for working with high-speed digital circuits. It is mainly used in switching power amplifiers, low noise amplifiers, audio amplifiers and optical systems. Its working principle is based on the construction of two p-n junctions, and the current gain is determined by the current flowing through the base of the transistor. Overall, the BC55-16PA,115 is a great transistor for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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