BC556BTF Allicdata Electronics
Allicdata Part #:

BC556BTFTR-ND

Manufacturer Part#:

BC556BTF

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 65V 0.1A TO-92
More Detail: Bipolar (BJT) Transistor PNP 65V 100mA 150MHz 500m...
DataSheet: BC556BTF datasheetBC556BTF Datasheet/PDF
Quantity: 1000
2000 +: $ 0.03028
6000 +: $ 0.02633
10000 +: $ 0.02238
50000 +: $ 0.01974
100000 +: $ 0.01755
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: BC556
Description

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Transistors are essential building blocks of various electronic circuitry. BC556BTF is a type of single, bipolar junction transistor (BJT) commonly used in circuit designs. This article will present an overview of the application field and working principle of BC556BTF.

The BC556BTF is a general-purpose transistor suited for a variety of applications. It can be used for switching, amplifying, and oscillation purposes. The transistor has two schematic symbols, PNP and NPN, which indicate the type of device. It has two active terminals, the base and the collector, and one passive or diode-connected terminal, the emitter. Depending on the type of device, either the base or the emitter is positively charged, so it can act as a switch.

The transistor functions by controlling the flow of electrons between its terminals. In the NPN symbol of the BC556BTF, the emitter is negatively charged and the base is positively charged. The current flow between the emitter and the base is termed as the base current, which is contributed by an external voltage source. By increasing the voltage across the base-emitter junction, more electrons are attracted to the base, and this increases the base current. This in turn causes a larger electron flow to be drawn from the emitter to the collector. The same principle applies to the PNP symbol.

The gain of a transistor is expressed by the current gain or the hFE. BC556BTF has a current gain ranging from 250 to 800, and this can be expressed as either hFE or DC current gain. It has a switching speed of 300mA to 5A, a power dissipation of 625mW, and maximum working voltage of 30V. The collector-emitter voltage (VCE) of the device is 600mV, and the base-emitter voltage (VBE) is 1.2V. It is rated for temperatures between -65°C and 150°C.

BC556BTF is widely used in switching applications, such as the input stage of power amplifiers, in digital ICs, and in DC-DC converters. It is also used in the input stage of operational amplifiers, as the open-collector transistor of a flip-flop, and for voltage clipping for voltage less than its IC rating. In addition, the transistor is used in oscillators, audio amplifiers, and general-purpose switching. It can also be used in logic circuits, pulse generators, low-noise amplifiers, and sample and hold applications.

To conclude, BC556BTF is a popular single, bipolar junction transistor used in various electronic applications. It has a current gain of 250-800, a switching speed of 300mA to 5A, and a power dissipation of 625mW. It is used in oscillator, amplifier, and other general-purpose switching circuits, as well as the input stage of power amplifiers, in digital ICs, and in voltage clipping applications. Despite its relatively low power capabilities, it is suitable for many applications.

The specific data is subject to PDF, and the above content is for reference

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