BC556BTFR Allicdata Electronics
Allicdata Part #:

BC556BTFRTR-ND

Manufacturer Part#:

BC556BTFR

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 65V 0.1A TO-92
More Detail: Bipolar (BJT) Transistor PNP 65V 100mA 150MHz 500m...
DataSheet: BC556BTFR datasheetBC556BTFR Datasheet/PDF
Quantity: 1000
1 +: $ 0.04000
10 +: $ 0.03880
100 +: $ 0.03800
1000 +: $ 0.03720
10000 +: $ 0.03600
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: BC556
Description

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Transistors are an important part of the foundation of modern electronics. They are used in a wide variety of applications, from low-voltage amplifiers to high-power switching. The BC556BTFR is a single bipolar junction transistor (BJT) which is specifically designed to be used in both low- and high-gain applications.

The BC556BTFR is a bipolar NPN transistors with a maximum operating collector current of 100mA and a breakdown voltage of 60V. It is a very versatile transistor as it can be used as a common-emitter amplifier, an emitter-follower, or even an impedance converter. Furthermore, due to its high gain performance, it can be used in applications such as pulse generation and high-speed signal processing.

The working principle of a bipolar junction transistor is quite simple. When a current is applied to the base terminal, it causes the voltage between the emitter and the base to increase. This in turn increases the current in the base, which is then amplified by the collector terminal. This allows a small current, applied to the base, to control a much larger current through the collector-emitter terminals, thus providing amplification.

The BC556BTFR, in particular, has an outdoor operating temperature range of -55C to +150C and has a maximum power dissipation of 625mW. Its maximum current gain is typically 300 at Ic=100mA, Vce=5V. It also has a minimum breakdown voltage of 60V, making it suitable for many applications. Furthermore, its storage temperature range of -65C to +150C ensures that it can handle extreme temperature fluctuation without degrading its performance.

The BC556BTFR is a versatile device and can be used in a variety of applications. For example, it can be used as a frequency multiplier, an audio preamplifier, a switching regulator, a pulse generator and an amplifier. It can also be used in a variety of audio applications, such as in amplifying speaker signals or in stereos and other home audio systems.

In conclusion, the BC556BTFR is a single bipolar junction transistor, specifically designed to be used in both low- and high-gain applications. Its wide operating temperature range and high current gain make it suitable for a variety of applications, from audio preamplifiers to pulse generators. Its breakdown voltage and power dissipation also make it a suitable device for a variety of high-power and high-voltage applications. Thus, the BC556BTFR is an important part of modern electronics.

The specific data is subject to PDF, and the above content is for reference

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