BC550ABU Allicdata Electronics
Allicdata Part #:

BC550ABU-ND

Manufacturer Part#:

BC550ABU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 45V 0.1A TO-92
More Detail: Bipolar (BJT) Transistor NPN 45V 100mA 300MHz 500m...
DataSheet: BC550ABU datasheetBC550ABU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: BC550
Description

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The BC550ABU transistor is a single bipolar junction transistor (BJT) that is usually packaged in a TO-92 plastic package. It is a PNP transistor, meaning that it has a N-type emitter region and a P-type base, as well as a P-type collector region.

The BC550ABU transistor is mainly used for signal amplification, voltage and current regulation, and switching applications. This transistor is available in the TO-92 package and comes in two different versions: PNP (BC550A) and NPN (BC550B). They both have the same electrical characteristics, but the BC550A is the PNP version and the BC550B is the NPN version.

The maximum voltage rating of the BC550ABU is 45V, and the maximum current rating is 0.5A. The collector emitter saturation voltage of the transistor is ≤ 0.5V and the collector emitter breakdown voltage is 45V. The maximum power dissipation is 500mW.

The BC550ABU transistor has a wide variety of applications including signal amplification, voltage and current regulation, switching applications, radio and television output stages, high frequency converters, and low noise amplifiers. It is also widely used in digital integrated circuits for switching applications, such as in logic gates, memory circuits, and other digital circuits.

The working principle of the BC550ABU transistor is based on the movement of both holes and electrons. The emitter region of the transistor has an N-type material, which is a semiconductor material that has a high concentration of negatively charged electrons in its lattice structure. The base region has a P-type material, which is a semiconductor material that has a high concentration of positively charged holes in its lattice structure. The collector region has a P-type material, too, but it has a lower concentration of holes than the emitter region.

When a current is applied to the base terminal of the BC550ABU, the holes in the base region become attracted to the electrons in the emitter region and a saturation current, called the collector current, starts to flow from the collector region to the emitter region. Furthermore, the base and collector regions, being P-type materials, are also attracted to each other, allowing for current to flow from the collector to the base and the Base-Emitter junction is reversed biased, allowing for the current flow from collector to emitter. This is what is known as the Base-Emitter junction and is the working principle of the BC550ABU transistor.

The BC550ABU transistor is a versatile, low-cost device that can be used in a wide range of applications. It is widely used in signal amplification, voltage and current regulation, and switching applications. Its wide collector emitter voltage range and low saturation voltage make it suitable for many different applications. Its working principle is based on the movement of electrons and holes, and it is an important component in many digital integrated circuits.

The specific data is subject to PDF, and the above content is for reference

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