BC558BBU

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	30V
Vce Saturation (Max) @ Ib, Ic:	650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):	15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 2mA, 5V
Power - Max:	500mW
Frequency - Transition:	150MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:	TO-92-3
Base Part Number:	BC558

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BC558BBU Application Field and Working Principle

BC558BBU, one of the most commonly used bipolar transistors, is a NPN power transistor manufactured by multiple leading semiconductor company. It has a collector-base breakdown voltage of 40 V and its maximum collector-emitter voltage is 25 V. The small signal transitions provided by BC558BBU are widely utilized for their variety of application fields. From audio amplifiers to switching circuits, many circuits require the use of a single BC558BBU for its outstanding performance. It works well in many electronic circuits, allowing the user greater flexibility.To gain a thorough understanding of how the BC558BBU functions, one must understand the fundamentals of a bipolar junction transistor. Semincondutors are made from silicon crystal, and each of its atoms are joined by four Sulphur atoms. This creates a lattice structure of four interconnected silicon atoms, and this is known as the N-type semiconductor. When some of the Sulphur atoms are replaced with Boron atoms, the lattice is disrupted and electrons are released. This is the P-type semiconductor.A bipolar junction transistor is formed when an N-type and a P-type semiconductor are placed together. This is what is known as the BJT or Bipolar Junction Transistor. The N-type region is known as the emitter and the P-type is known as the collector. In between the emitter and the collector lies the base, which is formed from a thin P-type material.In the BC558BBU, current flows from the collector to the emitter in two forms: the collector current, which is the current from the collector to the emitter, and the base current, which is the current from the base to the emitter. This base current does not pass through the BC558BBU, but rather, it is used to control the collector current. By reducing the size of the base current, the collector current is also reduced.The BC558BBU transistor works by controlling the amount of current flowing from the collector to the emitter, depending on the input voltage applied to the base. When a voltage is applied to the base of the transistor, electrons are drawn from the collector-emitter region and are then attracted to the positive voltage source, decreasing the current flowing to the collector.The amount of current flowing between the collector and the emitter is dependent on the base current. For example, when the base current is low, the collector current is reduced. Therefore, by controlling the base current, the amount of current flowing from the collector to the emitter can be adjusted.The BC558BBU is a versatile transistor and can be used for a variety of applications, from amplifiers to switches. The high gain and low saturation voltage of the BC558BBU allows it to be used in such applications as audio amplifiers, voltage amplifiers, power switches and signal switching circuits. It is also used in power amplifiers, signal modulators and signal amplifiers.In summary, BC558BBU is a power transistor that is commonly used in a variety of applications. Its small signal transitions allow it to be used in both audio amplifiers and switching circuits. It works by controlling the amount of current flowing through the collector and emitter by controlling the base current. The high gain and low saturation voltage of the BC558BBU have made it the go-to transistor for many electronic applications.

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