BC558C_J35Z Allicdata Electronics
Allicdata Part #:

BC558C_J35Z-ND

Manufacturer Part#:

BC558C_J35Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 30V 0.1A TO-92
More Detail: Bipolar (BJT) Transistor PNP 30V 100mA 150MHz 500m...
DataSheet: BC558C_J35Z datasheetBC558C_J35Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: BC558
Description

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BC558C_J35Z is a type of bipolar junction transistor (BJT). As a single transistor, it has three pins: the collector (C), the base (B) and the emitter (E). It is mainly used as an amplifier device in various electronic applications as well as providing a switch for various circuits.

The BC558C_J35Z is made up of three basic components: a p-type semiconductor material, an n-type semiconductor material and an additional n-type material, known as the collector junction. The p-type material and the n-type material are connected to the base and emitter respectively, forming an npn structure. When the collector junction and emitter junction are connected through a conductive material, such as a metal wire, the transistor is formed.

The BC558C_J35Z is designed mainly for use in low-power and medium-power applications, such as amplifiers, switches and digital logic circuits. In amplifiers, the transistor acts as a control unit, manipulating the amount of current flowing through the base-emitter junction from the input to the output. The transistor is also capable of actuating other components, such as LEDs, motors and relays, to switch them on or off.

To understand how the BC558C_J35Z works, it is important to understand the three layers of a transistor. The Base layer is typically made up of a thin film of semi-conductive material. The Base layer acts as a control unit that can allow or restrict current, when an input voltage is applied to it. The layer between the base and the Emitter is the base-emitter junction – this is usually filled with a thin film of semiconductor material acting as a resistor. The layer between the Collector and Emitter is the collector-emitter junction – this layer is filled with a thicker film of semiconductor material, acting as an insulator.

When an input voltage is applied to the Base layer of the BC558C_J35Z, the current will flow through the Base-Emitter junction and into the Collector-Emitter junction, where it is switched off. As the current is switched off, the output of the transistor increases, resulting in amplified output. The amount of current and voltage applied to the transistor can be controlled by adjusting the resistance of the Base-Emitter junction, thus controlling the amount of current flowing through it.

The BC558C_J35Z is available in various types, such as low-power, medium-power and high-power versions. The type chosen is determined by the application for which it is used. The low-power version is suitable for amplifiers, LEDs and relays, whilst the medium-power version is best for digital logic circuits, oscillators and switches. The high-power version is ideal for driving motors, switching large loads and controlling high-frequency applications. As with all transistors, it is important to pay close attention to the voltage and current ratings when selecting the transistor for a particular application.

In summary, the BC558C_J35Z is a type of BJT that is widely used in many types of applications, such as amplifiers, switches, LEDs, relays and digital logic circuits. It works by controlling the current flowing through the Base-Emitter junction, enabling it to amplify or switch off the current depending on the input voltage. The type of transistor chosen should match the application and should be selected based on the voltage and current ratings associated with the particular transistor.

The specific data is subject to PDF, and the above content is for reference

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