BC550BTAR Allicdata Electronics
Allicdata Part #:

BC550BTAR-ND

Manufacturer Part#:

BC550BTAR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 45V 0.1A TO-92
More Detail: Bipolar (BJT) Transistor NPN 45V 100mA 300MHz 500m...
DataSheet: BC550BTAR datasheetBC550BTAR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: BC550
Description

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BC550BTAR is an NPN transistor housed in an ultra small surface mount package. This transistor is also known as PN550BTAR. This transistor is used in a variety of applications, including amplifying and switching.In amplifying applications, the gain of the BC550BTAR is determined by its power gain, Aᵽ. This transistor has a power gain of approximately 10, allowing a relatively large signal to be amplified. In switching applications, the BC550BTAR is used to make a circuit act as a switch. This transistor can also be used in logic circuits.The BC550BTAR is designed for specific applications. It has an operating frequency of up to 200 MHz and can handle currents up to 100 mA. The maximum voltage rating is 40 volts, with a typical Vce sat rating (collector-emitter voltage at which the transistor is driven off or saturated) of 0.2 V.The BC550BTAR is a Bipolar Junction Transistor (BJT). BJTs are transistors that use the electric field generated by two terminals, the base and the collector, for controlling the current that flows between the emitter and collector. The base-emitter junction is forward biased and the base-collector junction is reverse biased. The electric field then generates a electric potential that allows the current to flow.The main advantage of BJTs is their low power consumption. They do not require a lot of power and can be driven with a low current. They also have high gain and wide bandwidth, so they can be used in many frequency ranges.The main disadvantage of BJTs is that they have a limited power range. If the current is too large, the transistor will become overloaded. If the current is too small, the transistor will not be able to carry enough current.The BC550BTAR is a single BJT. This transistor has just one base-emitter junction and one base-collector junction. Single BJTs are used in applications where the only requirement is to switch and control current. They are not used for applications like amplifiers or logic circuits, which require two or three junctions.In summary, the BC550BTAR is a single Bipolar Junction Transistor (BJT) used in a variety of applications. It can handle currents up to 100 mA and has a power gain of 10. It is ideally suited for applications such as amplifying and switching. It has a low power consumption and is economical to use. Additionally, its small size makes it an ideal choice for use in portable and embedded devices.

The specific data is subject to PDF, and the above content is for reference

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