BC550BU Allicdata Electronics
Allicdata Part #:

BC550BU-ND

Manufacturer Part#:

BC550BU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 45V 0.1A TO-92
More Detail: Bipolar (BJT) Transistor NPN 45V 100mA 300MHz 500m...
DataSheet: BC550BU datasheetBC550BU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: BC550
Description

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The BC550BU is a PNP (positive-negaitve-positve) bipolar junction transistor with an amplification of 200. It comes in a plastic TO-92-style case, making it ideal for small projects and applications which require limited energy input. BC550BU is an economical solution for those who are looking for an efficient, low-cost and reliable semiconductor device.

Applications for BC550BU

The BC550BU can be used in a variety of applications, from switching and interface applications to linear audio amplification and general-purpose amplifiers. It is widely used in TV circuit applications, such as vertical deflection circuits, voltage control circuits and driving stages. Due to its high current gain and low noise, it is also widely used as a constant current source or inversely, as a constant current load for amplifiers or drivers. It can be used to replace the equivalent 2N904 transistor.

Working Principle of BC550BU

The BC550BU transistor is a three layer semiconductor device, where the base is the semiconductor layer between the emitter and the collector. When the base receives a positive voltage, electrons are drawn from the emitter to the base and holes are drawn from the collector to the base. This creates a region of negative charge near the emitter, which causes the device to conduct electricity and thus amplifying the input voltage. When the voltage at the base is reversed, the device does not conduct electricity, thus allowing the use of the device for switching applications.

The performance of the BC550BU is dependent on the collector current. The voltage at the base determines the collector current, where an increase in base voltage will increase the collector current. This is because a higher base voltage also means a higher current between the emitter and the base, thus leading to a higher current from the collector. When the collector draws more current, the resistance between the collector and the emitter will increase, thus resulting in a decrease in the collector current. By understanding this phenomenon, the performance of the BC550BU can be accurately predicted.

The design of the BC550BU also includes a built-in temperature compensation feature. This ensures that the device is capable of providing accurate output over a variety of temperatures with minimal degradation due to the temperature change. Additionally, the device has a low leakage current rating, which helps minimize the power consumption of the device and allows it to be used in energy-efficient circuits. Furthermore, the device also has a high maximum allowable voltage, which makes it suitable for a wide range of high-voltage applications.

Conclusion

The BC550BU is a PNP bipolar junction transistor with an amplification of 200 and is suitable for use in a variety of different applications. It is a low-cost, reliable and efficient semiconductor device and can be used for both switching and linear audio applications. Furthermore, it has a built-in temperature compensation feature, low leakage current and high maximum allowable voltage for use in high-voltage circuits. Thus, the BC550BU can be used to replace its equivalent 2N904 transistor for a variety of applications involving low power consumption, high current gain and low noise.

The specific data is subject to PDF, and the above content is for reference

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