BC556BBU

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	65V
Vce Saturation (Max) @ Ib, Ic:	650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):	15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 2mA, 5V
Power - Max:	500mW
Frequency - Transition:	150MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:	TO-92-3
Base Part Number:	BC556

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Introduction

BC556BBU is a low-power, general-purpose, NPN bipolar junction transistor (BJT). It is a single transistor that can be used in a number of applications, ranging from signal switching and amplification to voltage regulation and protection. The BC556BBU is a reliable, radiation resistant member of the BC556 family of transistors and is rated for a maximum voltage of 40V and a maximum collector current of 0.25A. As such, it is suitable for low-voltage or signals ranging applications inside of electronic equipment or circuits.

Features

The BC556BBU is a particularly attractive option for circuit designers as it offers a range of features including:

• Low-power (collector dissipation of 625mW)
• High-gain bandwidth product (hFE 320)
• High gain (hFE 240 at Ic 1mA)
• Low noise figure (NF 60dB)
• Low collector-base capacitance (CB 20pF)
• Radiation resistance
• Wide operation temperature range (-65°C to 150°C)

Application fields

The BC556BBU is suitable for a range of low-voltage or low-signal applications and is commonly used in transistors amplifiers, switches, drivers, and other electronics equipment. It can be used in analogue circuits, linear circuits, and general-purpose switching circuits. The BC556BBU is also suitable a range of power supplies and voltage regulation circuits.

Working principle

The BC556BBU operates on the principle of a BJT, whereby a current flows from the collector and to the base of the transistor, reducing the base-emitter current flow from the base to the emitter. The reduction in base-emitter current flow is proportional to the collector current through the transistor. This process is known as the transistor’s amplification effect and allows the transistor to be used as an amplifier.

Biasing

The BC556BBU is a NPN transistor, which means that the base-emitter voltage (VBE) is always less than the collector-emitter voltage (VCE). The emitter and collector are also connected to the transistor\'s power source, as well as to each other through a resistor. This ensures that the transistor will always be operating at its optimum parameters.

Gain and noise

The BC556BBU has an excellent DC gain (hFE) rating of 320 and a noise figure (NF) of 60dB. A high gain provides an amplified signal to better process the given signal, while a low noise figure allows the transistor to reduce the amount of electrical noise that is typically introduced into a circuit.

Conclusion

The BC556BBU is a durable, low-power NPN transistor that is suitable for low-voltage or low-signal applications. The transistor offers a high-gain bandwidth product and excellent gain and noise figures. It is suitable for a range of analogue, linear, and general-purpose switching circuits. As a reliable and radiation-resistant member of the BC556 family of transistors, the BC556BBU can be a great option in various applications.

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