BC556BTAR Allicdata Electronics
Allicdata Part #:

BC556BTAR-ND

Manufacturer Part#:

BC556BTAR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 65V 0.1A TO-92
More Detail: Bipolar (BJT) Transistor PNP 65V 100mA 150MHz 500m...
DataSheet: BC556BTAR datasheetBC556BTAR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: BC556
Description

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BC556BTAR Application Field and Working Principle

1. Introduction

BC556BTAR is a family of NPN PNP transistors manufactured by European semiconductor manufacturer Diodes Incorporated. It is designed for general-purpose applications such as switch, amplifier and other circuit applications. It is made from high-speed, low-noise bipolar technology.

2. Field of Application

BC556BTAR transistors are most commonly used in amplifier and low noise audio applications, as well as in logic circuits. These kinds of transistors have become popular in radio-frequency applications owing to their excellent frequency response.

3. Working Principle

A bipolar transistor is a three-terminal semiconductor device which has two p-type (electron) and n-type (holes) semiconductor material layers. These layers form a connection between source and drain. It works based on the fact that when a small amount of voltage is applied at its base (control) terminal, a large current will be allowed to pass through the collector and emitter terminal that control the flow of current between them. This current passes from the emitter to the collector as a result of the voltage applied between the base and emitter terminals.

4. Specifications and Ratings

BC556BTAR transistors can handle up to a maximum collector-emitter voltage of 40V and maximum collector current leak of 1mA. The minimum current gain (hFE) of the device is 60, with a frequency response range of 400MHz – 6GHz. The device features a maximum power dissipation of 250mW.

5. Conclusion

In conclusion, BC556BTAR is a popular family of NPN PNP transistors that is used in a variety of applications, such as amplifiers and logic circuits. It is based on a bipolar transistor and has excellent frequency response. It has high-speed, low-noise features, and it features a high current gain with 40 volts of collector-emitter voltage, a maximum current leak of 1mA and a maximum power dissipation of 250mW.

The specific data is subject to PDF, and the above content is for reference

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