BC558BTF Allicdata Electronics
Allicdata Part #:

BC558BTF-ND

Manufacturer Part#:

BC558BTF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 30V 0.1A TO-92
More Detail: Bipolar (BJT) Transistor PNP 30V 100mA 150MHz 500m...
DataSheet: BC558BTF datasheetBC558BTF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: BC558
Description

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The BC558BTF is a PNP Bipolar Junction Transistor (BJT). It is a single transistor and is capable of amplifying current. It has a variety of uses, including boosting current signals in high-power amplifier circuits and circuit switching and voltage regulation.

The BC558BTF’s primary application field is amplifying, switching, and regulating current. It can be used to boost the current signal in a high-power amplifier, in order to increase the power gain. It can also be used as a switch, which can turn on associated electronics to perform a specific function. It can also be used in voltage regulation, in order to ensure the correct output voltage is delivered from a system or circuit.

The BC558BTF is a PNP type BJT, meaning it has a base-collector-emitter construction. Its DC current gains are in the range of 600-700. The BC558BTF can cope with up to 625mV of reverse voltage and can sustain collector currents up to 100mA. It is also capable of producing transistors with a wide range of current amplification factors, making it an ideal choice for high-power amplifier circuits.

The working principle of the BC558BTF is an electron current flow. Electrons exit the emitter and pass through the base, where they are limited by the transistor’s resistance. Any excess current is then diverted away from the base-collector junction. At the same time, the current passing through the BC558BTF is amplified by a factor determined by the transistor’s DC current gain. The amplified current is then discharged from the collector, where it can be used in certain circuits.

The BC558BTF is a versatile, single transistor, capable of increasing the power gain in high-power amplifier circuits. It can also be used in switches, voltage regulation, and amplifying current signals. Its DC current gain ranges from 600-700 and can produce transistors with a wide range of current amplification factors. It is capable of sustaining collector currents up to 100 mA and up to 625 mV of reverse voltage. Therefore, the BC558BTF is an ideal choice for boosting current signals in high-power amplifier circuits and circuit switching and voltage regulation.

The specific data is subject to PDF, and the above content is for reference

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