BC558BU Allicdata Electronics
Allicdata Part #:

BC558BU-ND

Manufacturer Part#:

BC558BU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 30V 0.1A TO-92
More Detail: Bipolar (BJT) Transistor PNP 30V 100mA 150MHz 500m...
DataSheet: BC558BU datasheetBC558BU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: BC558
Description

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The BC558BU is a type of low-power bipolar junction transistor (BJT) typically used in low-to-medium-power amplifier, switching and circuit controlling applications. A BJT is a semiconductor device consisting of three terminals: an emitter, a base and a collector. The BJT acts as a three-terminal switch or amplifier within an electronic circuit. In most BJTs, the base-emitter junction is forward-biased with a small current applied to the base terminal, and the base-collector junction is reverse-biased with a voltage applied to the collector terminal. The BJT then allows current to flow from the emitter to the collector. The BC558BU is a type of single BJT, which only requires one electrical connection, or ‘pin’, to be activated.

The BC558BU’s collector-to-emitter voltage ranges from a maximum of 45 volts to a minimum of 3 volts, and has a power dissipation rating of 630mW (at 25°C). It can handle a collector current of 200mA, and a base current of 400mA. The BC558BU also has a high current gain, of approximately 100-300.

BC558BU BJTs are mainly used in low-to-medium power amplifier, switching and circuit controlling applications. It is often found in the input audio stages of amplifiers and filters, as well as radio frequency (RF) amplifying stages. It has many other applications and can be used in different types of circuits, such as voltage dividers, current dividers and light emitting diode (LED) drivers. Additionally, the device is available in various packages depending on the level of device protection desired.

The main working principle of the BC558BU can be described as a transistor biased in the middle of its active region, with no current flowing between the collector and emitter. When a small voltage is applied to its base, electrons from the emitter will flow to its collector, resulting in a large voltage gain from the device. This gain can be adjusted by changing the base current, allowing the user to manipulate the gain of the transistor. Conversely, when no voltage is applied to the base, the BC558BU remains in its ‘off’ state, with no current flowing between the collector and emitter.

The BC558BU is a low-power BJT that is suitable for low-to-medium-power amplifiers, switching and circuit controlling applications. Its high current gain and small packages make it an ideal choice for an array of applications. To ensure optimal performance and reliability, it is important to mount the BC558BU in the correct manner following the manufacturer’s instructions.

The specific data is subject to PDF, and the above content is for reference

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