BC817-40WT1G Allicdata Electronics
Allicdata Part #:

BC817-40WT1GOSTR-ND

Manufacturer Part#:

BC817-40WT1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 45V 0.5A SC70
More Detail: Bipolar (BJT) Transistor NPN 45V 500mA 100MHz 460m...
DataSheet: BC817-40WT1G datasheetBC817-40WT1G Datasheet/PDF
Quantity: 18000
Stock 18000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Power - Max: 460mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3
Description

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BC817-40WT1G is a NPN transistor mainly used for amplifying or switching applications.

The BC817-40WT1G belongs to the family of Bipolar Transistors - Single. These types of transistors use both holes and electrons as charge carriers and are the simplest type of multi-junction transistors. They can be used in both switching and linear amplifier applications.

The BC817-40WT1G has a maximum collector-emitter voltage (BVCEO) of 45 V and a maximum collector current (IC) of 50 mA. The maximum collector power dissipation (PC) rating is 330 mW. This allows it to operate at quite high power levels when compared to other transistors.

In terms of its application field, the BC817-40WT1G can be used for amplifying signals from low-level sources such as microphones, speakers and guitar pickups. It can also be used for general purpose switching such as relays, motors and actuators. Additionally, since it is small, it can be used for small signal circuits, for example for audio amplifiers, circuits for medical applications and power supplies.

The working principle of the BC817-40WT1G can be described as follows: The input signal is applied across the base and emitter terminals, and the current is amplified when the base-to-emitter voltage (VBE) becomes greater than the threshold voltage (VTH). This causes the collector voltage (VC) to switch on or off, depending on the polarity of the voltage applied to the collector. The amplifier then controls the output current.

The basic operation of the transistor can be described in terms of two distinct states: cut-off and saturation states. In the cut-off state, the transistor is not conducting any current and the output voltage is at its minimum level. In the saturation state, the current flow is at its maximum level and the output voltage is at its maximum level.

The output current of the transistor is limited to the maximum collector current (IC). The maximum collector current can be further reduced by increasing the collector-emitter voltage (BVCEO). In addition, the amount of current that can be supplied to the base can be adjusted with the base resistor (Rb).

In summary, the BC817-40WT1G is a NPN transistor that belongs to the family of Bipolar Transistors - Single. It can be used in various applications such as amplifying or switching, and its working principle can be described as the switching of current flow between the cut-off and saturation states in response to the base-to-emitter voltage and the collector voltage.

The specific data is subject to PDF, and the above content is for reference

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