| Allicdata Part #: | BC817-40LT3GOSTR-ND |
| Manufacturer Part#: |
BC817-40LT3G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS NPN 45V 0.5A SOT-23 |
| More Detail: | Bipolar (BJT) Transistor NPN 45V 500mA 100MHz 300m... |
| DataSheet: |  BC817-40LT3G Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 500mA |
| Voltage - Collector Emitter Breakdown (Max): | 45V |
| Vce Saturation (Max) @ Ib, Ic: | 700mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 250 @ 100mA, 1V |
| Power - Max: | 300mW |
| Frequency - Transition: | 100MHz |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23-3 (TO-236) |
| Base Part Number: | BC817 |
Description
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BC817-40LT3G is a high performance, NPN Silicon Planar Epitaxial Transistor with high gain and low saturation voltage. It is designed for high-speed switching and amplifier applications. BC817-40LT3G transistors feature a wide range of capabilities such as high frequency, low noise, high power, high gain, and low output impedance.BC817-40LT3G come in two packages, one with leadless surface-mount technology that provides ultra-high density packaging, and one with leads for standard through-hole applications. They are also resistant to dielectric breakdowns and infiltration due to their Silicon-On-Insulator (SOI) construction. The on-resistance of these transistors is significantly lower than that of an equivalent conventional bipolar junction transistor (BJT) due to the SOI construction. The maximum collector current for these transistors is 5.6 A.
The working principle of a BC817-40LT3G transistor is that it acts as a switch between two terminals, the source and the drain. The source is connected to a positive voltage, while the drain is connected to a negative voltage. A signal at the gate (the third terminal) causes the current to flow from the source to the drain. The base region of the transistor provides a path of varying resistance, which is based on the gate voltage.The BC817-40LT3G\'s main application fields include high-speed switching, amplifier applications, voltage regulators, high-power amplifiers, class-D audio amplifiers, voltage regulators, power on/off applications, and many others. Its high-speed switching capability makes it ideal for switching applications with frequencies up to 150MHz. The low saturation voltage makes it suitable for applications that require low output voltage levels. Also, its SOI construction provides much lower on-resistance than conventional BJTs, making it suitable for power-on/off applications.The BC817-40LT3G has a wide range of capabilities to satisfy different application requirements. Its high frequency capability makes it suitable for switching applications. Its low noise and high power output make it suitable for amplifier applications. Its low on-resistance makes it suitable for power-on/off applications. Its high gain and low saturation voltage make it suitable for voltage regulation applications. All these combined capabilities make it an ideal solution for many applications.In conclusion, the BC817-40LT3G is an excellent choice for any applications that require high-speed switching, high power amplifiers, or voltage regulators. It has many advantages over conventional BJTs due to its SOI construction and its high-frequency design. Its wide range of capabilities makes it suitable for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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