BC817-40W RFG Allicdata Electronics
Allicdata Part #:

BC817-40WRFG-ND

Manufacturer Part#:

BC817-40W RFG

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: TRANSISTOR, NPN, 45V, 0.5A, 250A
More Detail: Bipolar (BJT) Transistor NPN 45V 500mA 100MHz 200m...
DataSheet: BC817-40W RFG datasheetBC817-40W RFG Datasheet/PDF
Quantity: 1000
3000 +: $ 0.01855
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Power - Max: 200mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Description

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BC817-40W RFG is a type of bipolar junction transistor (BJT) making it belong to the single family. Specifically, it is an NPN transistor. It has a wide range of applications of up to 40V and 0.5A and 3W, making it perfect for RF low power amplifier in digital and analog configuration.

A Bipolar Junction Transistor (BJT) is a semiconductor device comprising of two p-n junctions connected in series. An NPN type has one P type material sandwiched between two N type materials and a PNP type has one N type material sandwiched between two P type materials. In NPN transistors, such as BC817-40W RFG, the current flows from the collector to the emitter when a small current flows from the base to the emitter. This is known as the emitter-base junction and is reverse biased.

BC817-40W RFG can be used as an RF voltage amplifier. It is capable of amplifying voltages in the range of 0.3V to 12V. The transistor has two transistor sections connected in common emitter configuration. The two sections are each capable of providing up to 0.3V of gain. This allows the user to increase the gain of the RF voltage supplied to the base by using two transistors. In this configuration, the base resistance of the BC817-40W RFG is also increased, allowing for improved linearity of the amplified signal.

The working principle of BC817-40W RFG is based on the collector characteristic curves. The collector is connected to the base-emitter voltage and collector voltage. The collector current is proportional to the difference between the collector and base voltages. The transistor acts as a current amplifier by allowing the collector current to increase with an increase in the base voltage. When the base voltage increases, the collector current increases, and the transistor amplifies the input signal.

BC817-40W RFG can be used in applications where low power amplification is required such as RF amplifiers, audio amplifiers, and oscillator circuits. It has an excellent range of features, including low power consumption and good thermal stability. The BC817-40W RFG also has good linearity and excellent long-term stability. The transistor is also best suited for low-frequency RF power amplifiers due to its reduced losses and low distortion. Furthermore, it can be used in high speed applications, such as FM radio and Cellular systems.

In conclusion, BC817-40W RFG is a NPN bipolar junction transistor. It has a wide range of applications of up to 40V and 0.5A and 3W, making it perfect for RF low power amplifier in digital and analog configuration. It can be used as an RF voltage amplifier, with two transistor sections connected in common emitter configuration. It can also be used in applications where low power amplification is required, such as RF amplifiers, audio amplifiers, and oscillator circuits. It has an excellent range of features, including low power consumption and good thermal stability.

The specific data is subject to PDF, and the above content is for reference

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