| Allicdata Part #: | BC858BW-7-F-ND |
| Manufacturer Part#: |
BC858BW-7-F |
| Price: | $ 0.03 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | TRANS PNP 30V 0.1A SC70-3 |
| More Detail: | Bipolar (BJT) Transistor PNP 30V 100mA 200MHz 200m... |
| DataSheet: | BC858BW-7-F Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.02527 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 30V |
| Vce Saturation (Max) @ Ib, Ic: | 650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max): | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 220 @ 2mA, 5V |
| Power - Max: | 200mW |
| Frequency - Transition: | 200MHz |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-70, SOT-323 |
| Supplier Device Package: | SOT-323 |
| Base Part Number: | BC858 |
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The BC858BW-7-F transistor is a single NPN (negative-positive-negative) bipolar junction transistor (BJT). It is a low power signal transistor commonly used in a wide variety of applications, such as radio frequency amplification, signal switching, signal modulation and more. The BC858BW-7-F features high signal linearity, high voltage breakdown and high gain. The transistor is also designed with a very low input capacitance, making it an ideal choice for low frequency designs.
The BC858BW-7-F was designed to operate in the range of −65 to +150 °C. The transistor is also well-suited for use in high voltage and high frequency applications due to its low on-resistance and low reverse transfer characteristics. Additionally, the transistor has a secure mounting position, making it easy to install into tight PCBs.
The BC858BW-7-F transistor is manufactured using an NPN (negative-positive-negative) semiconductor structure. The transistor consists of three layers of doped semiconductor materials, each with their own electrical properties. The three layers of material are the base, collector and emitter. The basic operation of an NPN BJT is that current flows from the collector to the emitter when a small current (base current) is applied to the base of the transistor.
The BC858BW-7-F application field and working principle is not only limited to the mentioned above but can be used in many other applications such as radio-frequency (RF) amplifiers, video amplifiers, line drivers, switches, limiters and linear amplifiers. The BC858BW-7-F can also be used in audio amplifiers, high current applications and power supplies. The transistor works in both AC and DC operation and is particularly suited for low current, high frequency designs.
When using the BC858BW-7-F, it is important to take into account the necessary voltage and current ratings of the transistor so that it can be operated safely. The transistor has a collector-emitter voltage rating of 60V and a collector current of 150mA. It also supports an oscillator frequency range of 4MHz. It is important to consider this ratings when designing with the BC858BW-7-F in order to ensure proper operation and avoid damage to the device.
The BC858BW-7-F is a versatile transistor that can be used in a wide range of applications. It is well suited for low current and high frequency designs and is available in a variety of packages for easy integration into PCBs. The transistor can support a wide range of voltage and current ratings, as well as oscillator frequencies, making it a reliable and powerful choice for any application.
The specific data is subject to PDF, and the above content is for reference
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BC858BW-7-F Datasheet/PDF