BC856BW/ZLF

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Transistors - Bipolar (BJT) - Single

BC856BW/ZLF transistors are single transistors that belong to the bipolar junction transistor (BJT) family. A BJT is a type of transistor that consists of three distinct semiconductor layers (base, collector and emitter) that are attached in a certain configuration so as to make it suitable for different applications. The BC856BW/ZLF is a NPN silicon planar epitaxial transistor produced using a glass-passivated epitaxial structure.

Application Field

The BC856BW/ZLF is suitable for a wide range of amplifier, switch and oscillator applications, including audio output stages, low-frequency amplifiers and switching circuits. It is very suitable for audio output stages in car audio systems, because its high current gain makes it ideal for low-frequency power amplifiers. It is also an excellent choice for switching circuits because of its high cut-off frequency, low collector-emitter saturation voltage, and low base drive current.

Working Principle

The working principle of a BJT is based on the principle of a diode. In a diode, the current flow is in only one direction and is blocked in the opposite direction. This happens because the diode is composed of two distinct junctions, i.e., the P-type and the N-type semiconductors. When the P-type semiconductor is connected to the positive terminal of a power source and the N-type semiconductor is connected to the negative terminal, current can flow only in the forward direction, i.e., from the positive to the negative terminal.

In a BJT, a base terminal is inserted between the P-N junctions, so that current can flow in three directions now. In the forward direction, from the collector to the emitter, current can flow due to the P-N junction formed between the collector and the base. In the reverse direction, from the emitter to the collector, current can flow due to the P-N junction formed between the emitter and the base. This gives the BJT a bi-directional control capability, i.e., the current flow can be controlled by the base current.

In the BC856BW/ZLF, the base current is controlled by the base voltage. When the base voltage is increased, more electrons are injected into the base and more current flows through the collector and emitter. This allows the BC856BW/ZLF to be used as an amplifying device as well as a switching device.

Conclusion

The BC856BW/ZLF transistor is a versatile device that can be used for a wide range of applications. Its unique design of three distinct semiconductor layers makes it suitable for both amplifier and switch applications. Its low collector-emitter saturation voltage, high current gain and low base drive current make it an excellent choice for audio output stages, low-frequency amplifiers and switching circuits.

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