Allicdata Part #: | BC857C/DG/B3,215-ND |
Manufacturer Part#: |
BC857C/DG/B3,215 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS GEN PURPOSE TO-236AB |
More Detail: | Bipolar (BJT) Transistor PNP 45V 100mA 100MHz 250m... |
DataSheet: | BC857C/DG/B3,215 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 650mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 125 @ 2mA, 5V |
Power - Max: | 250mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BC857C/DG/B3,215, which belongs to the category of transistors — bipolar (BJT) — single, is a NPN general-purpose transistor popularly used in low-power, high-frequency applications such as amplifiers, switching circuits, and digital logic drives. This transistor can operate up to a maximum collector current of 800mA, at a voltage of 50V and at a power dissipation of 625mW. Let us discuss its application field and working principles.
Application Field
As mentioned earlier, due to its moderate characteristics and fast switching capability, the BC857C/DG/B3,215 can be used in a variety of applications. It is a popular choice for the design of amplifier circuits since it offers good linearity and distortion performance. But, its ability to switch at high frequencies makes it an excellent choice for driving digital logic circuits. Additionally, the transistor can also be used in various analog circuits, including oscillators and oscillation suppression circuits. The transistor can also be used in switching power supplies, as well as in automotive circuits.
Working Principle
As a NPN transistor, the BC857C/DG/B3,215 is made up of three terminals: the base, collector, and emitter. The emitter and collector states come pre-doped with a N-type semiconductor while the base is made up of a P-type semiconductor. This arrangement creates three layers of P and N-type material which forms a diode (called the bipolar junction diode).
In order to operate the transistor, a voltage must be applied to the base terminal. This changes the charge of the base layer, and thereby controlling the amount of current flowing from the emitter to the collector. This phenomenon is called transistor action. The size of the current is determined by the amount of voltage applied to the base terminal and the ratio of the collector to the emitter areas.
When the base voltage is applied, it creates a depletion layer around the base-emitter junction. This layer blocks the flow of current from the collector to the emitter, which leads to the transistor being said in the OFF state. As the voltage increases further, the depletion layer starts to get thinner, and more current it allowed to flow through. Eventually the current reaches a level where the transistor is said to be at its saturation point, or the ON state.
Conclusion
The BC857C/DG/B3,215 is an economical NPN transistor suitable for a variety of applications such as amplifiers, switching circuits and digital logic drives. Its moderate characteristics and fast switching capability makes it a popular choice for these applications. Operating the transistor is straightforward and based on conventional transistors principles. The size of the current is determined by the amount of voltage applied to the base terminal and the ratio of the collector to the emitter areas.
The specific data is subject to PDF, and the above content is for reference
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