BC857CWE6327BTSA1 Allicdata Electronics
Allicdata Part #:

BC857CWE6327BTSA1TR-ND

Manufacturer Part#:

BC857CWE6327BTSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS PNP 45V 0.1A SOT-323
More Detail: Bipolar (BJT) Transistor PNP 45V 100mA 250MHz 250m...
DataSheet: BC857CWE6327BTSA1 datasheetBC857CWE6327BTSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 250mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3
Base Part Number: BC857
Description

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BC857CWE6327BTSA1 belongs to a special type of transistor, known as Bipolar Junction Transistor (BJT), which consists of 3 terminals for a single transistor. It is mainly used in areas such as amplifiers, regulated power supplies and switching circuits. Furthermore, it is suitable for direct power connection for motor, starter to the high current applications.

A transistor is a semiconductor device which is used to switch and control a small electric current. Bipolar junction transistors operate in two modes, namely the active and saturation regions. When the transistor is in its active region, it is used to amplify the AC signals, while in saturation mode, it is used to control the higher DC or AC currents. The DC parameters of the transistor such as base-emitter and emitter-collector voltage determine the region of operation.

The operating principle of BC857CWE6327BTSA1 involves a small current at the base terminal of the transistor. This current assists in controlling the much larger current from the collector to the emitter. The current gain of this transistor is effectively increased when an AC voltage is applied over it, and it works towards providing amplifying effects on the output. The maximum collector current can be up to 100mA while the collector-emitter voltage can go up to 45V.

The base-emitter and emitter-collector junction of BC857CWE6327BTSA1 play an important role in determining its overall operating characteristics. When the base terminal is turned on, a few electrons flow through the base-emitter junction, thereby allowing a much larger amount of current to pass between the collector and emitter terminals. The current amplification factor of this transistor is determined by the ratio between the collector current and the base current.

BC857CWE6327BTSA1 is a bipolar junction transistor, which is most commonly used in amplifiers and switching circuits. The operating principle involves a small current at the base terminal, which is used to control the much larger current between the collector and emitter. When the base is turned on, a few electrons flow through the base-emitter junction, allowing a much larger current to pass. The current amplification factor of this transistor is determined by the ratio between the collector-emitter current and the base current.

The specific data is subject to PDF, and the above content is for reference

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