BCM856DS,115 Discrete Semiconductor Products |
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Allicdata Part #: | 1727-5391-2-ND |
Manufacturer Part#: |
BCM856DS,115 |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS 2PNP 65V 0.1A 6TSOP |
More Detail: | Bipolar (BJT) Transistor Array 2 PNP (Dual) Matche... |
DataSheet: | BCM856DS,115 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.06192 |
6000 +: | $ 0.05848 |
15000 +: | $ 0.05332 |
30000 +: | $ 0.04988 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP (Dual) Matched Pair |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 65V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2mA, 5V |
Power - Max: | 380mW |
Frequency - Transition: | 175MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-74, SOT-457 |
Supplier Device Package: | 6-TSOP |
Base Part Number: | BCM856 |
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The BCM856DS,115 is a type of transistor array that falls into the category of bipolar junction transistors, or BJT. Though this type of transistor array can be used to create various types of electronic circuits, they are often used as amplifiers, switches, and other active electronic components in the design of complex electronic systems. In this article, we will explore the application field and working principle of the BCM856DS,115.
Application Field
The BCM856DS,115 is designed for a wide variety of applications, ranging from microwave receivers to mobile phone tracking systems. When used as an amplifier, it can amplify low-level signals to a more desirable level, allowing signals to travel further and ensuring clearer information transmission. When used as a switch, it can efficiently switch between two states — either digital or analog — and open or close a circuit as required by the design. It can also be deployed in medical devices and diagnostics, as well as satellite communication systems and data transmission systems.
Working Principle
The BCM856DS,115 is a multi-layered BJT which consists of three layers, each filled with different amounts of charge. When a small potential difference is applied across one of the layers, a current is formed, allowing a current to flow through the circuit. This current affects the transistor array and can control the flow of electron carriers, allowing for the design of specific active elements. The BCM856DS,115 is usually deployed as a common-emitter transistor, meaning that it can be used as an amplifier and switch, as well as a variety of other electronic elements.
When used as an amplifier, the transistor array can increase the strength of an incoming signal. This is done by allowing a current to flow through the emitter, which is then amplified by the collector and output back into the circuit with increased power. In addition, the transistor array can be used as a switch, allowing electronic signals to be either on or off as required by the design.
Conclusion
The BCM856DS,115 is a multi-layered BJT transistor array. It can be used for a wide variety of applications, most commonly for amplifying signals and switching between digital and analog states. The transistor array works by allowing a small potential difference to be applied to one of its layers and allowing a current to flow through the circuit. This can be used to control the flow of electron carriers, allowing it to be used as an amplifier or switch, as well as a variety of other active electronic components.
The specific data is subject to PDF, and the above content is for reference
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TRANS NPN/PNP 45V 0.1A 6DFNBipolar (BJT)...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
IC INTEGRATED CIRCUITBipolar (BJT) Trans...