BCM857BV,115 Allicdata Electronics
Allicdata Part #:

1727-5459-2-ND

Manufacturer Part#:

BCM857BV,115

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS 2PNP 45V 0.1A SOT666
More Detail: Bipolar (BJT) Transistor Array 2 PNP (Dual) Matche...
DataSheet: BCM857BV,115 datasheetBCM857BV,115 Datasheet/PDF
Quantity: 1000
4000 +: $ 0.07089
8000 +: $ 0.06660
12000 +: $ 0.06230
28000 +: $ 0.05715
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 PNP (Dual) Matched Pair
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 300mW
Frequency - Transition: 175MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-666
Base Part Number: BCM857
Description

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The BCM857BV,115 is a transistor array designed for 5V applications. The BCM857BV,115 is a nine element scaled array, in which each transistor is controlled separately for application specific control. As a 9-element transistor array, the BCM857BV,115 provides low-distortion, high-speed switching for applications such as RF transmission, signal generation, and general-purpose switching.

The BCM857BV,115 is part of a family of Bipolar Junction Transistor (BJT)-based transistors. BJT transistors utilise a three-layer structure consisting of two p-type semiconductor layers (called the base and collector) and an n-type layer (called the emitter). When a small current is applied to the base of the BJT, it is amplified across the collector and emitter, producing a substantial current flow. This amplification capability makes BJT transistors ideal for applications requiring high levels of current amplification.

The BCM857BV,115 is part of a family of BJT-based transistor arrays. Unlike standard BJT transistors, transistor arrays have multiple transistors in a single package. In the case of the BCM857BV,115, each signal input is controlled separately for application specific control. This enables the BCM857BV,115 to be used for high-speed signal transmission, as each signal can be controlled individually for low distortion, high speed switching.

The BCM857BV,115 can be used in a wide range of applications, from RF transmission and signal generation to general-purpose switching. In addition, the BCM857BV,115 is ideally suited for applications requiring low-distortion, high-speed switching, as each transistor in the array is individually controllable. As such, the BCM857BV,115 is a popular choice for applications such as audio/video processing and instrumentation systems.

In summary, the BCM857BV, 115 is a 9-element transistor array designed for applications such as RF transmission, signal generation, and general-purpose switching. It is part of a family of BJT-based transistor arrays and provides low-distortion, high-speed switching capabilities. As such, the BCM857BV,115 is an ideal solution for applications requiring high levels of current amplification and low-distortion, high-speed switching.

The specific data is subject to PDF, and the above content is for reference

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