Allicdata Part #: | 1727-5459-2-ND |
Manufacturer Part#: |
BCM857BV,115 |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS 2PNP 45V 0.1A SOT666 |
More Detail: | Bipolar (BJT) Transistor Array 2 PNP (Dual) Matche... |
DataSheet: | BCM857BV,115 Datasheet/PDF |
Quantity: | 1000 |
4000 +: | $ 0.07089 |
8000 +: | $ 0.06660 |
12000 +: | $ 0.06230 |
28000 +: | $ 0.05715 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP (Dual) Matched Pair |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2mA, 5V |
Power - Max: | 300mW |
Frequency - Transition: | 175MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SOT-666 |
Base Part Number: | BCM857 |
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The BCM857BV,115 is a transistor array designed for 5V applications. The BCM857BV,115 is a nine element scaled array, in which each transistor is controlled separately for application specific control. As a 9-element transistor array, the BCM857BV,115 provides low-distortion, high-speed switching for applications such as RF transmission, signal generation, and general-purpose switching.
The BCM857BV,115 is part of a family of Bipolar Junction Transistor (BJT)-based transistors. BJT transistors utilise a three-layer structure consisting of two p-type semiconductor layers (called the base and collector) and an n-type layer (called the emitter). When a small current is applied to the base of the BJT, it is amplified across the collector and emitter, producing a substantial current flow. This amplification capability makes BJT transistors ideal for applications requiring high levels of current amplification.
The BCM857BV,115 is part of a family of BJT-based transistor arrays. Unlike standard BJT transistors, transistor arrays have multiple transistors in a single package. In the case of the BCM857BV,115, each signal input is controlled separately for application specific control. This enables the BCM857BV,115 to be used for high-speed signal transmission, as each signal can be controlled individually for low distortion, high speed switching.
The BCM857BV,115 can be used in a wide range of applications, from RF transmission and signal generation to general-purpose switching. In addition, the BCM857BV,115 is ideally suited for applications requiring low-distortion, high-speed switching, as each transistor in the array is individually controllable. As such, the BCM857BV,115 is a popular choice for applications such as audio/video processing and instrumentation systems.
In summary, the BCM857BV, 115 is a 9-element transistor array designed for applications such as RF transmission, signal generation, and general-purpose switching. It is part of a family of BJT-based transistor arrays and provides low-distortion, high-speed switching capabilities. As such, the BCM857BV,115 is an ideal solution for applications requiring high levels of current amplification and low-distortion, high-speed switching.
The specific data is subject to PDF, and the above content is for reference
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TRANS NPN/PNP 45V 0.1A 6DFNBipolar (BJT)...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
IC INTEGRATED CIRCUITBipolar (BJT) Trans...