BCM847QASZ Discrete Semiconductor Products |
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Allicdata Part #: | 1727-7831-2-ND |
Manufacturer Part#: |
BCM847QASZ |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | BCM847QAS/SOT1216/DFN1010B-6 |
More Detail: | Bipolar (BJT) Transistor Array 2 NPN (Dual) Matche... |
DataSheet: | BCM847QASZ Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.06665 |
10000 +: | $ 0.06234 |
25000 +: | $ 0.05733 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN (Dual) Matched Pair |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2mA, 5V |
Power - Max: | 350mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-XFDFN Exposed Pad |
Supplier Device Package: | DFN1010B-6 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BCM847QASZ is a low-barrier double-gate silicon digital enhancer diode transistor array. These devices are useful in digital enhancement and switch applications. They are suitable for operating at higher temperatures and are a popular choice for applications such as automotive, mechanical and electronic applications.
BCM847QASZ Applications
The BCM847QASZ is particularly popular for use in high-power applications, as it can withstand high current loads. It is also often used in switching applications, where it can be used to control the current, providing the necessary protection. In addition, they can be used in medical equipment, optoelectronics, industrial machinery, and other high-reliability applications. Moreover, due to their integrated protection system, they are ideal for use in LED lighting, LED displays, and other LED electronic component applications.
BCM847QASZ Working Principle
The BCM847QASZ works using the principle of double-gate silicon digitalenhancer diode. This integrated protection system works in a similar way to that of an ordinary diode, however, it also takes advantage of the double-gate technology to provide enhanced protection. This protection system works by creating a barrier that limits the amount of current passing through the device, preventing the electrical component from overloading. Additionally, the double-gate technology helps prevent voltage surges, ensure an accurate readout, and increase the device’s overall reliability.
When a current is first applied to the BCM847QASZ, the two gates act as two resistors in series. This causes the current to be divided into two parts, with one part passing through each of the gates. The second gate then acts as an additional resistor, which reduces the voltage further. This configuration helps limit the amount of current flowing through the device, providing additional protection.
Conclusion
The BCM847QASZ is a low-barrier double-gate silicon digital enhancer diode transistor array. This device is ideal for use in high-power applications, as it can withstand high current loads. It is also often used in switching applications, where it can be used to control the current, providing the necessary protection. Additionally, due to its double-gate technology, it provides improved protection against voltage surges and ensures an accurate readout. Overall, the BCM847QASZ is a reliable and cost-effective option for applications that require enhanced protection and improved performance.
The specific data is subject to PDF, and the above content is for reference
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TRANS NPN/PNP 45V 0.1A 6DFNBipolar (BJT)...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
IC INTEGRATED CIRCUITBipolar (BJT) Trans...