BCM847QASZ Allicdata Electronics

BCM847QASZ Discrete Semiconductor Products

Allicdata Part #:

1727-7831-2-ND

Manufacturer Part#:

BCM847QASZ

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: BCM847QAS/SOT1216/DFN1010B-6
More Detail: Bipolar (BJT) Transistor Array 2 NPN (Dual) Matche...
DataSheet: BCM847QASZ datasheetBCM847QASZ Datasheet/PDF
Quantity: 1000
5000 +: $ 0.06665
10000 +: $ 0.06234
25000 +: $ 0.05733
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 NPN (Dual) Matched Pair
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 350mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Supplier Device Package: DFN1010B-6
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BCM847QASZ is a low-barrier double-gate silicon digital enhancer diode transistor array. These devices are useful in digital enhancement and switch applications. They are suitable for operating at higher temperatures and are a popular choice for applications such as automotive, mechanical and electronic applications.

BCM847QASZ Applications

The BCM847QASZ is particularly popular for use in high-power applications, as it can withstand high current loads. It is also often used in switching applications, where it can be used to control the current, providing the necessary protection. In addition, they can be used in medical equipment, optoelectronics, industrial machinery, and other high-reliability applications. Moreover, due to their integrated protection system, they are ideal for use in LED lighting, LED displays, and other LED electronic component applications.

BCM847QASZ Working Principle

The BCM847QASZ works using the principle of double-gate silicon digitalenhancer diode. This integrated protection system works in a similar way to that of an ordinary diode, however, it also takes advantage of the double-gate technology to provide enhanced protection. This protection system works by creating a barrier that limits the amount of current passing through the device, preventing the electrical component from overloading. Additionally, the double-gate technology helps prevent voltage surges, ensure an accurate readout, and increase the device’s overall reliability.

When a current is first applied to the BCM847QASZ, the two gates act as two resistors in series. This causes the current to be divided into two parts, with one part passing through each of the gates. The second gate then acts as an additional resistor, which reduces the voltage further. This configuration helps limit the amount of current flowing through the device, providing additional protection.

Conclusion

The BCM847QASZ is a low-barrier double-gate silicon digital enhancer diode transistor array. This device is ideal for use in high-power applications, as it can withstand high current loads. It is also often used in switching applications, where it can be used to control the current, providing the necessary protection. Additionally, due to its double-gate technology, it provides improved protection against voltage surges and ensures an accurate readout. Overall, the BCM847QASZ is a reliable and cost-effective option for applications that require enhanced protection and improved performance.

The specific data is subject to PDF, and the above content is for reference

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