| Allicdata Part #: | BCP5310H6327XTSA1-ND |
| Manufacturer Part#: |
BCP5310H6327XTSA1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | TRANS PNP 80V 1A SOT223 |
| More Detail: | Bipolar (BJT) Transistor PNP 80V 1A 125MHz 2W Surf... |
| DataSheet: | BCP5310H6327XTSA1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Last Time Buy |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 1A |
| Voltage - Collector Emitter Breakdown (Max): | 80V |
| Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 63 @ 150mA, 2V |
| Power - Max: | 2W |
| Frequency - Transition: | 125MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-261-4, TO-261AA |
| Supplier Device Package: | PG-SOT223-4 |
| Base Part Number: | BCP53 |
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The BCP5310H6327XTSA1 is a transistor VCE (Collector-Emitter Voltage) that is applicable to a variety of different fields. These include power amplifiers, RF amplifiers, and switching circuits. It is categorized as a bipolar junction transistor (BJT), which are commonly used in electronic circuits due to their superior characteristics.
A bipolar junction transistor is a three-terminal particular device that is commonly available in either a single or dual configuration. In single configuration, the two base terminals and the emitter terminal are connected together, while in dual configuration, the two base terminals and the collector terminal are connected together. The BCP5310H6327XTSA1 is a single BJT.
The BJT transistor has several characteristics that make it desirable for use in a variety of applications. One of the main attributes is its high current gain, known as beta, which ensures that a small amount of current can control a large current. This is important in circuits where a single input can control a large output. Additionally, BJTs are often capable of both current amplification and voltage amplification.
The BCP5310H6327XTSA1 transistor works through the use of two pn-junction diodes. These diodes are connected together with one negative side and one positive side. When a small current is applied, the current flow is primarily between the two diode junctions, which causes a voltage difference to be created. This voltage is then applied to the base of the transistor, which in turn causes the current flow through the transistor to be changed. This process is known as current modulation, which is a fundamental principle in transistor circuits.
The BCP5310H6327XTSA1 can be used in a wide range of applications, including power amplifiers, RF amplifiers, and switching circuits. It can be used in power amplifiers to increase current drive and voltage gains, allowing them to generate higher output signals with greater efficiency. Additionally, it can be used in RF amplifiers to improve noise performance during signal transmission. It is also useful in switching applications, as its high current gain and ability to quickly switch between states puts it in an advantageous position to act as an electronic switch.
The BCP5310H6327XTSA1 is an excellent choice for a variety of applications due to its many advantageous characteristics. The high current gain, voltage regulation, and quick switching ability make it an ideal solution for many different applications. Its relatively low cost and high performance make it a great option for both DIY enthusiasts and professional engineers alike. The BCP5310H6327XTSA1 can be used in a number of different applications, from power amplifiers and RF amplifiers to switching circuits.
The specific data is subject to PDF, and the above content is for reference
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BCP5310H6327XTSA1 Datasheet/PDF