Allicdata Part #: | BCP69,135-ND |
Manufacturer Part#: |
BCP69,135 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PNP 20V 1A SOT223 |
More Detail: | Bipolar (BJT) Transistor PNP 20V 1A 140MHz 1.4W Su... |
DataSheet: | BCP69,135 Datasheet/PDF |
Quantity: | 1000 |
4000 +: | $ 0.05894 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 100mA, 1A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 85 @ 500mA, 1V |
Power - Max: | 1.4W |
Frequency - Transition: | 140MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Base Part Number: | BCP69 |
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BCP69-135 is a type of single-polarity, NPN, low-noise, high-gain bipolar junction transistor (BJT) that registers low noise levels relative to its feature size and has near-ideal gain behavior over the gain band of operation. The BCP69-135 transistor comes in a TO-39 metallic case with a built-in heat sink. It has a 4.4 watt power dissipation capacity, IC of 0.75A and an operating temperature range of-55°C to+150°C. The transistor is primarily intended for audio, low frequency amplifier and feedback circuits, but can also be used for power switching applications.
The working principle of the BCP69-135 is based on the electrical operation of a semiconductor junction. A diode junction is formed between N+ and P- doped (NPN) regions of a semiconductor material. The minority carriers diffuse through the junction and combine with the majority carriers to form a depletion region. The combination of minority carriers in the depletion region creates a field effect that controls the flow of current within the junction.
The BCP69-135 can operate in three different modes: active, cutoff, and saturation. In active mode, the emitter-to-base voltage must be at least 0.7V, while the collector-to-emitter voltage must be below 0.2V, resulting in a current gain of β. In cutoff mode, the base-to-emitter voltage must be below 0.7V, and the collector-to-emitter voltage must be below 0.2V, which causes the current between collector and emitter to be zero. In saturation mode, the base-to-emitter voltage must be greater than 0.7V, and the collector-to-emitter voltage must be above 0.2V, which allows the maximum current to flow between the collector and emitter.
The BCP69-135 has several advantages that make it ideal for many applications. Its low noise characteristics make it suitable for use in audio amplification and feedback circuits. Its 4.4 watt power dissipation capacity, operating temperature range, and excellent gain characteristics make it a reliable transistor choice for many different power switching applications. Additionally, its small size allows it to be used in portable and low profile devices.
In conclusion, the BCP69-135 is a single-polarity NPN low-noise, high-gain bipolar junction transistor that has excellent gain characteristics making it an ideal choice for many different applications. It operates in three different modes; active, cutoff, and saturation, and its small size makes it suitable for use in low profile and portable devices. This transistor has become a staple in the electronics industry due to its versatile capabilities, robust performance, and low noise levels.
The specific data is subject to PDF, and the above content is for reference
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