BCP69-16/ZLF Allicdata Electronics
Allicdata Part #:

BCP69-16/ZLF-ND

Manufacturer Part#:

BCP69-16/ZLF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MEDIUM POWER TRANSISTOR
More Detail: Bipolar (BJT) Transistor PNP 20V 2A 140MHz 1.35W S...
DataSheet: BCP69-16/ZLF datasheetBCP69-16/ZLF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Automotive, AEC-Q101
Part Status: Last Time Buy
Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
Power - Max: 1.35W
Frequency - Transition: 140MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SC-73
Description

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BCP69-16/ZLF is a single bipolar junction transistor (BJT), part of the 800MHz fT range. BCP69-16/ZLF is designed for switch-mode power supplies and provides high-band operation up to 800MHz with a minimum transition frequency of 276MHz. It provides designers with a robust, high power transistor for applications that demand a high level of performance and stability.

Features

  • High-band operation up to 800MHz
  • Minimum transition frequency of 276MHz
  • Low input capacitance
  • High gain linearity
  • Available in SMT or through-hole packages
  • 1.8V – 5.5V voltage range
  • Wide variety of power handling capabilities

Applications

  • High frequency switch-mode power supplies
  • RF power amplifiers
  • Broadband amplifier designs
  • Low noise amplifier (LNA) designs
  • Audio amplifiers

Working Principle

The BCP69-16/ZLF is a single bipolar junction transistor (BJT) that provides a high level of performance and stability. A BJT is a type of transistor that is formed when two semiconductor regions are connected together to form an “emitter-base-collector” arrangement. The emitter region is heavily doped while the base and collector regions are lightly doped. The majority carriers flow from the emitter to the base where they undergo hole injection, which increases the majority carriers’ concentration in the base. This, in turn, allows for a substantial current flow from the emitter to the collector, which results in amplified output.

The BCP69-16/ZLF is designed for use in high frequency applications, such as switch-mode power supplies, RF power amplifiers, broadband amplifiers, low noise amplifiers, and audio amplifiers. Due to its high-band operation up to 800MHz, it can provide a great deal of noise immunity and an extremely low input capacitance, which allows designers to achieve a high level of gain linearity. This ensures that the BCP69-16/ZLF can operate with exceptional levels of stability, making it ideal for a range of demanding applications.

The specific data is subject to PDF, and the above content is for reference

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