BCP69-16F Allicdata Electronics
Allicdata Part #:

1727-2755-2-ND

Manufacturer Part#:

BCP69-16F

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: BCP69-16/SC-73/REEL 13" Q1/T1
More Detail: Bipolar (BJT) Transistor Surface Mount SOT-22...
DataSheet: BCP69-16F datasheetBCP69-16F Datasheet/PDF
Quantity: 1000
4000 +: $ 0.07280
8000 +: $ 0.06839
12000 +: $ 0.06398
28000 +: $ 0.05883
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: *
Packaging: Tape & Reel (TR) 
Part Status: Active
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

BCP69-16F is one of the most popular and widely used transistors available in the market today. It belongs to the family of bipolar junction transistors (BJTs) and has been designed to provide high performance operation in application fields such as power switching, amplifiers, and relays. The device\'s superior performance has made it a favorite of many engineers and technicians working in the industry.

BCP69-16F consists of a single n-p-n junction transistor with a manufacture frequency range of 40 – 200 MHz. It is packaged in a hermetically sealed TO-39 metal can, which offers superior protection from the external environment. The transistor has a remarkable bipolar power gain capability across a wide frequency range and is capable of handling high currents up to 200mA.

When it comes to application fields, BCP69-16F is typically used in power switching, relay control, and amplifiers. It is also widely used as a high power RF transistor, thanks to its superior power gain capabilities. Additionally, the device can also be used in other applications, such as modulators and demodulators. Lastly, the transistor can also be used as an oscillator in audio frequency electronics.

The working principle of BCP69-16F is based on the same principle as all bipolar junction transistors. It consists of three terminals, one emitter, one base, and one collector. By passing current through the emitter, a small current is generated at the base. This current then amplifies the flow of current between the collector and the emitter, resulting in much greater current flow than that through the emitter.

Furthermore, the device has built-in voltage and power regulation capabilities, making it ideal for power switching, relay control, and amplifier applications. Additionally, its wide gain bandwidth product (GBWP) ensures low-distortion operational capabilities even at frequencies up to 80MHz. The device is also capable of withstanding high temperature environments due to its hermetically sealed package.

The specific data is subject to PDF, and the above content is for reference

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